公开(公告)号：US20240429084A1

公开(公告)日：2024-12-26

申请号：US18409082

申请日：2024-01-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngbok LEE ,  Sangchul HAN ,  Yihwan KIM ,  Yeontae KIM ,  Namjin CHO

IPC: H01L21/683 ,  H01L21/67

Abstract: A substrate processing apparatus that includes a mounting table including an insulator having a loading surface; a gas distribution unit including injection holes; and a gas supply unit that supplies process gas. An electrode and a heater are embedded in the insulator, and a dielectric layer covers the loading surface. The dielectric layer includes a lower material layer, an intermediate material layer, and an upper material layer. The intermediate material layer has a third thickness, greater than each of a first thickness of the lower material layer and a second thickness of the upper material layer. The intermediate material layer has a third dielectric constant, greater than each of a first dielectric constant of the lower material layer and a second dielectric constant of the upper material layer.