公开(公告)号：US20240019311A1

公开(公告)日：2024-01-18

申请号：US18198482

申请日：2023-05-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yeon Tae KIM ,  Hun Yong PARK ,  Yihwan KIM ,  Ji Hoon KIM ,  Kee Soo PARK

IPC: G01K1/02 ,  G01K11/12 ,  G01J5/00 ,  G01J5/0801 ,  G01J5/53

CPC classification number: G01K1/026 ,  G01K11/12 ,  G01J5/0003 ,  G01J5/0801 ,  G01J5/53

Abstract: A substrate temperature measuring device includes a sensor which senses a first amount of light of a first light having a first wavelength, a second amount of light of a second light having a second wavelength, and a third amount of light of a third light having a third wavelength provided from a substrate, a first calculator to calculate a first temperature for the first wavelength, a second temperature for the second wavelength, and a third temperature of the wavelength through the first amount of light, the second amount of light and the third amount of light which are sensed, and a second calculator to calculate emissivity of the substrate and reflected energy of the substrate through the first temperature, the second temperature, and the third temperature, wherein a temperature of the substrate is calculated through the calculated emissivity of the substrate and the reflected energy of the substrate.

公开(公告)号：US20250079129A1

公开(公告)日：2025-03-06

申请号：US18420009

申请日：2024-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junho LEE ,  Sangchul HAN ,  Yihwan KIM ,  Yeontae KIM

IPC: H01J37/32

Abstract: A liner structure may include a liner and a first block. The liner may be configured to be arranged on an inner sidewall of a reaction chamber configured to receive a heater and a substrate. The first block may be connected to the liner. The first block may include a material different from a material of the liner.

公开(公告)号：US20240429084A1

公开(公告)日：2024-12-26

申请号：US18409082

申请日：2024-01-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngbok LEE ,  Sangchul HAN ,  Yihwan KIM ,  Yeontae KIM ,  Namjin CHO

IPC: H01L21/683 ,  H01L21/67

Abstract: A substrate processing apparatus that includes a mounting table including an insulator having a loading surface; a gas distribution unit including injection holes; and a gas supply unit that supplies process gas. An electrode and a heater are embedded in the insulator, and a dielectric layer covers the loading surface. The dielectric layer includes a lower material layer, an intermediate material layer, and an upper material layer. The intermediate material layer has a third thickness, greater than each of a first thickness of the lower material layer and a second thickness of the upper material layer. The intermediate material layer has a third dielectric constant, greater than each of a first dielectric constant of the lower material layer and a second dielectric constant of the upper material layer.

公开(公告)号：US20240381616A1

公开(公告)日：2024-11-14

申请号：US18636744

申请日：2024-04-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongkeun CHO ,  Suhwan HWANG ,  Kanguk KIM ,  Yihwan KIM ,  Jihoon KIM ,  Jinhyung PARK ,  Hyunsu SHIN ,  Taemin EARMME ,  Sungwook JUNG

IPC: H10B12/00

Abstract: A method may include forming a first gate structure on a first region of a substrate, forming a bit line structure on the first gate structure, forming a preliminary contact plug layer including amorphous silicon on the substrate, forming a reflective layer structure on the preliminary contact plug layer, forming a contact plug layer from the preliminary contact plug layer, and forming a capacitor on the contact plug layer. The reflective layer structure may include first and second reflective layers. A refractive index of the second reflective layer may be being greater than that of the first reflective layer. Portions of the second reflective layer may have different thicknesses on first and second regions of the substrate. The forming the contact plug layer may include performing a melting laser annealing (MLA) process on the reflective layer structure to convert the amorphous silicon of the preliminary contact plug layer into polysilicon.

公开(公告)号：US20240060185A1

公开(公告)日：2024-02-22

申请号：US18231400

申请日：2023-08-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yeontae KIM ,  Yihwan KIM ,  Hunyong PARK ,  Keesoo PARK ,  Janghwi LEE ,  Sungho JANG

IPC: C23C16/48 ,  C23C16/458

CPC classification number: C23C16/482 ,  C23C16/4585

Abstract: A substrate processing apparatus includes a chamber including a susceptor to support a substrate, a reflective housing outside the chamber, a light source in the reflective housing, the light source being configured to emit a light toward the susceptor, and a light adjuster between the light source and the susceptor, the light adjuster including a support portion supported inside the chamber and a lens coupled to the support portion, and the lens including a transmission portion configured to transmit the light and a scattering pattern portion configured to scatter the light.

公开(公告)号：US20200303523A1

公开(公告)日：2020-09-24

申请号：US16889899

申请日：2020-06-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong Chan SUH ,  Sangmoon LEE ,  Yihwan KIM ,  Woo Bin SONG ,  Dongsuk SHIN ,  Seung Ryul LEE

IPC: H01L29/66 ,  H01L21/28 ,  H01L29/786 ,  H01L29/423

Abstract: A method for manufacturing a semiconductor device and a semiconductor device, the method including forming an active pattern on a substrate such that the active pattern includes sacrificial patterns and semiconductor patterns alternately and repeatedly stacked on the substrate; and forming first spacer patterns at both sides of each of the sacrificial patterns by performing an oxidation process, wherein the first spacer patterns correspond to oxidized portions of each of the sacrificial patterns, wherein the sacrificial patterns include a first semiconductor material containing impurities, wherein the semiconductor patterns include a second semiconductor material different from the first semiconductor material, and wherein the impurities include an element different from semiconductor elements of the first semiconductor material and the second semiconductor material.

公开(公告)号：US20190067285A1

公开(公告)日：2019-02-28

申请号：US15939914

申请日：2018-03-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangmoon LEE ,  Jungtaek KIM ,  Yihwan KIM ,  Woo Bin SONG ,  Dongsuk SHIN ,  Seung Ryul LEE

IPC: H01L27/092 ,  H01L21/84 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including a substrate; an active pattern spaced apart from the substrate and extending in a first direction; and a gate structure on the active pattern and extending in a second direction crossing the first direction, wherein a lower portion of the active pattern extends in the first direction and includes a first lower surface that is sloped with respect to an upper surface of the substrate.

公开(公告)号：US20240167162A1

公开(公告)日：2024-05-23

申请号：US18215916

申请日：2023-06-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyeong LEE ,  Sangyeon OH ,  Minsung KIM ,  Byeongsang KIM ,  Yihwan KIM ,  Sangchul HAN

IPC: C23C16/458 ,  C23C16/46

CPC classification number: C23C16/4586 ,  C23C16/4581 ,  C23C16/46

Abstract: A substrate processing apparatus includes a chamber providing a space for performing a semiconductor process on a semiconductor substrate, and a substrate stage configured to support the semiconductor substrate. The substrate stage includes a platen having a seating surface to support the semiconductor substrate, the platen having a resistance heater and an RF electrode adjacent to the seating surface, a shaft under the platen, the shaft having a first through hole in a central region and a plurality of second through holes in a peripheral region surrounding the central region, an RF rod spaced apart from an inner wall of the first through hole, the RF rod electrically connected to the RF electrode, and a plurality of heater rods respectively within the plurality of second through holes and electrically connected to the resistance heater.

公开(公告)号：US20240068748A1

公开(公告)日：2024-02-29

申请号：US18204459

申请日：2023-06-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joohee KIM ,  Youngjae JEON ,  Jaehyun CHO ,  Yihwan KIM ,  Sangmin LEE

IPC: F27B17/00 ,  H05B3/00

CPC classification number: F27B17/0025 ,  H05B3/0047

Abstract: A wafer heating apparatus may include a heating chamber having an internal space and a heating lamp disposed in the internal space of the heating chamber. The heating lamp may be configured to heat a wafer. The heating lamp may include a plurality of lamps. Each of the plurality of lamps may have circular band shapes with open regions. At least one lamp may be disposed in at least one region among regions adjacent to the open regions of the plurality of lamps.

公开(公告)号：US20240170308A1

公开(公告)日：2024-05-23

申请号：US18215258

申请日：2023-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joohee KIM ,  Youngjae JEON ,  Jaehyun CHO ,  Yihwan KIM

IPC: H01L21/67

CPC classification number: H01L21/67115 ,  H01L21/67017 ,  H01J37/3171

Abstract: An apparatus for preheating a substrate includes a preheating chamber, a cooling plate, a heater, an isolation plate, a gas supplier and a gas discharger. The preheating chamber may be configured to receive the substrate. The cooling plate may be arranged on an upper surface of the preheating chamber. The heater may be arranged between the cooling plate and the substrate to heat the substrate. The isolation plate may be arranged between the cooling plate and the substrate to form a first space between the preheating chamber and the isolation plate and a second space between the cooling plate and the isolation plate. The gas supplier may be configured to individually supply a vent gas to the first space and the second space. The gas discharge may be configured to individually supply vacuum to the first space and the second space.