中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

6 records (took 0.031 seconds)

    LINER STRUCTURE
    1.
    发明申请
    LINER STRUCTURE 有权

    公开(公告)号：US20250079129A1

    公开(公告)日：2025-03-06

    申请号：US18420009

    申请日：2024-01-23

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Junho LEE ,  Sangchul HAN ,  Yihwan KIM ,  Yeontae KIM

    IPC: H01J37/32

    Abstract: A liner structure may include a liner and a first block. The liner may be configured to be arranged on an inner sidewall of a reaction chamber configured to receive a heater and a substrate. The first block may be connected to the liner. The first block may include a material different from a material of the liner.

    SUBSTRATE STAGE AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME
    2.
    发明公开
    SUBSTRATE STAGE AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME 审中-公开

    公开(公告)号：US20240167162A1

    公开(公告)日：2024-05-23

    申请号：US18215916

    申请日：2023-06-29

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jihyeong LEE ,  Sangyeon OH ,  Minsung KIM ,  Byeongsang KIM ,  Yihwan KIM ,  Sangchul HAN

    IPC: C23C16/458 ,  C23C16/46

    CPC classification number: C23C16/4586 ,  C23C16/4581 ,  C23C16/46

    Abstract: A substrate processing apparatus includes a chamber providing a space for performing a semiconductor process on a semiconductor substrate, and a substrate stage configured to support the semiconductor substrate. The substrate stage includes a platen having a seating surface to support the semiconductor substrate, the platen having a resistance heater and an RF electrode adjacent to the seating surface, a shaft under the platen, the shaft having a first through hole in a central region and a plurality of second through holes in a peripheral region surrounding the central region, an RF rod spaced apart from an inner wall of the first through hole, the RF rod electrically connected to the RF electrode, and a plurality of heater rods respectively within the plurality of second through holes and electrically connected to the resistance heater.

    SUBSTRATE PROCESSING APPARATUS
    3.
    发明申请
    SUBSTRATE PROCESSING APPARATUS 有权

    公开(公告)号：US20240429084A1

    公开(公告)日：2024-12-26

    申请号：US18409082

    申请日：2024-01-10

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Youngbok LEE ,  Sangchul HAN ,  Yihwan KIM ,  Yeontae KIM ,  Namjin CHO

    IPC: H01L21/683 ,  H01L21/67

    Abstract: A substrate processing apparatus that includes a mounting table including an insulator having a loading surface; a gas distribution unit including injection holes; and a gas supply unit that supplies process gas. An electrode and a heater are embedded in the insulator, and a dielectric layer covers the loading surface. The dielectric layer includes a lower material layer, an intermediate material layer, and an upper material layer. The intermediate material layer has a third thickness, greater than each of a first thickness of the lower material layer and a second thickness of the upper material layer. The intermediate material layer has a third dielectric constant, greater than each of a first dielectric constant of the lower material layer and a second dielectric constant of the upper material layer.

    SUBSTRATE PROCESSING APPARATUS
    5.
    发明公开
    SUBSTRATE PROCESSING APPARATUS 审中-公开

    公开(公告)号：US20240145288A1

    公开(公告)日：2024-05-02

    申请号：US18323719

    申请日：2023-05-25

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Youngbok LEE ,  Yihwan KIM ,  Seongkeun CHO ,  Sangchul HAN

    IPC: H01L21/683 ,  C23C16/458

    CPC classification number: H01L21/6833 ,  C23C16/4583

    Abstract: A substrate processing apparatus includes a chamber providing a space where a semiconductor process is performed on a semiconductor substrate, a substrate plate configured to support the semiconductor substrate, the substrate plate having a central region and a peripheral region surrounding the central region, a central embossing pattern on the central region and configured to support a central portion of the semiconductor substrate, a plurality of first embossing patterns radially arranged around the central embossing pattern on the peripheral region, each of the plurality of first embossing patterns extending radially outward from the central embossing pattern with a first length, and a plurality of second embossing patterns respectively provided between the first embossing patterns on the peripheral region, each of the plurality of second embossing patterns extending radially outward from the central embossing pattern with a second length that is less than the first length.

    PLASMA GENERATOR
    6.
    发明申请
    PLASMA GENERATOR 有权

    公开(公告)号：US20230060486A1

    公开(公告)日：2023-03-02

    申请号：US17748152

    申请日：2022-05-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Changyun LEE ,  Myoungsoo KIM ,  Sangchul HAN ,  Daeman SEO

    IPC: H05H1/46

    Abstract: A plasma generator includes a coaxial tube assembly, a radio frequency (RF) electrode, and a feed including an inner circumferential surface that defines a first and second recesses at opposite, first and second ends of the feed. A first protrusion of the coaxial tube assembly is coupled to the first recess of the feed. A second protrusion of the coaxial tube assembly is coupled to the second recess of the feed. The feed includes first and second inner surfaces that define first and second insertion grooves in the inner circumferential surface at the first and second ends of the feed, respectively. First and second coil springs are at least partially within the first and second insertion grooves, respectively. The coaxial tube assembly, the RF electrode, and the feed provide an RF power transmission path based on the feed being coupled between the coaxial tube assembly and the RF electrode.

Patent Agency Ranking