公开(公告)号：US20230229083A1

公开(公告)日：2023-07-20

申请号：US18148449

申请日：2022-12-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： JUHYEON PARK ,  JI YUP KIM ,  JINJOO KIM ,  HYUNWOO KIM ,  SUNG HWAN PARK

IPC: G03F7/039 ,  C08F220/28 ,  H01L21/027 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/308

CPC classification number: G03F7/039 ,  C08F220/281 ,  H01L21/0274 ,  H01L21/32139 ,  H01L21/31144 ,  H01L21/308 ,  G03F7/2004

Abstract: Provided are photoresist compositions for EUV and methods for manufacturing a semiconductor device using the same. The photoresist compositions for EUV include a photosensitive resin, a photoacid generator, and an additive, wherein the additive comprises a copolymer including a first repeating unit that includes a fluoroalkyl group or hydrocarbon group substituted with one or more fluoroalkyl group(s), and a second repeating unit that includes a sulfonic acid group and an amide group.