公开(公告)号：US11107681B2

公开(公告)日：2021-08-31

申请号：US16578245

申请日：2019-09-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Youn Seo ,  Ji Woon Im ,  Dai Hong Kim ,  Ik Soo Kim ,  Sang Ho Rha

IPC: H01L21/033 ,  H01L21/02

Abstract: A method of fabricating a semiconductor device and a semiconductor processing apparatus are provided. The method of fabricating a semiconductor device comprises preparing a semiconductor substrate having a front side and a back side, opposing each other, and forming a material layer on the semiconductor substrate. The material layer is formed on at least a portion of the back side of the semiconductor substrate while being formed on the front side of the semiconductor substrate. The material layer formed on the at least a portion of the back side of the semiconductor substrate is removed, while the material layer formed on the front side of the semiconductor substrate remains. A semiconductor process is performed to fabricate the semiconductor device using the material layer remaining on the front side of the semiconductor substrate.