公开(公告)号：US11049860B2

公开(公告)日：2021-06-29

申请号：US16682061

申请日：2019-11-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byoung Deog Choi ,  Ji Woon Im

IPC: H01L27/108 ,  H01L21/764 ,  B82Y10/00 ,  H01L49/02

Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including a substrate; a first conductive pattern on the substrate; a second conductive pattern on the substrate and spaced apart from the first conductive pattern; an air spacer between the first conductive pattern and the second conductive pattern; and a quantum dot pattern covering an upper part of the air spacer.

公开(公告)号：US20190203353A1

公开(公告)日：2019-07-04

申请号：US16043255

申请日：2018-07-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： IL JUN JEON ,  Ji Ho Uh ,  Je Hak Lee ,  Jun Sung Lee ,  Ji Woon Im

IPC: C23C16/458 ,  H01J37/32 ,  C23C16/50 ,  H01L21/687

CPC classification number: C23C16/4585 ,  C23C16/50 ,  H01J37/32715 ,  H01L21/68771

Abstract: A substrate support unit according to an example embodiment of the present inventive concept may include a support having an upper surface on which a substrate is disposed; a coupling ring on which an edge of the substrate is disposed, the coupling ring being having an annular shape, wherein the coupling ring is disposed on an edge of the support; and an arm part for raising and lowering the coupling ring and the substrate, wherein the arm part is disposed below the coupling ring and under a portion of the coupling ring, wherein the coupling ring has a first region disposed on the arm part and a second region disposed around the first region, wherein the first region has a thickness greater than that of the second region.

公开(公告)号：US11107681B2

公开(公告)日：2021-08-31

申请号：US16578245

申请日：2019-09-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Youn Seo ,  Ji Woon Im ,  Dai Hong Kim ,  Ik Soo Kim ,  Sang Ho Rha

IPC: H01L21/033 ,  H01L21/02

Abstract: A method of fabricating a semiconductor device and a semiconductor processing apparatus are provided. The method of fabricating a semiconductor device comprises preparing a semiconductor substrate having a front side and a back side, opposing each other, and forming a material layer on the semiconductor substrate. The material layer is formed on at least a portion of the back side of the semiconductor substrate while being formed on the front side of the semiconductor substrate. The material layer formed on the at least a portion of the back side of the semiconductor substrate is removed, while the material layer formed on the front side of the semiconductor substrate remains. A semiconductor process is performed to fabricate the semiconductor device using the material layer remaining on the front side of the semiconductor substrate.

公开(公告)号：US11018045B2

公开(公告)日：2021-05-25

申请号：US15993752

申请日：2018-05-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Youn Seo ,  Byung Sun Park ,  Sung Jin Park ,  Ji Woon Im ,  Hyun Seok Lim ,  Byung Ho Chun ,  Yu Seon Kang ,  Hyuk Ho Kwon ,  Tae Yong Eom ,  Dae Hun Choi ,  Dong Hyeop Ha

IPC: H01L21/687 ,  C23C14/50 ,  C23C16/455 ,  H01J37/32 ,  C23C16/458

Abstract: A deposition apparatus for depositing a material on a wafer, the apparatus including a lower shower head; an upper shower head disposed on the lower shower head, the upper shower head facing the lower shower head; and a support structure between the upper shower head and the lower shower head, the wafer being supportable by the support structure, wherein the upper shower head includes upper holes for providing an upper gas onto the wafer, the lower shower head includes lower holes for providing a lower gas onto the wafer, the support structure includes a ring body surrounding the wafer; a plurality of ring support shafts between the ring body and the lower shower head; and a plurality of wafer supports extending inwardly from a lower region of the ring body to support the wafer, and the plurality of wafer supports are spaced apart from one another.

公开(公告)号：US10950544B2

公开(公告)日：2021-03-16

申请号：US16445021

申请日：2019-06-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong Ik Lee ,  Dai Hong Kim ,  Ji Woon Im ,  Se Mee Jang ,  Bo Ra Nam

IPC: H01L23/528 ,  H01L27/11582 ,  H01L21/768 ,  H01L23/522 ,  H01L27/11565

Abstract: A semiconductor device includes a gate pattern disposed over a lower structure, and including a gate electrode region and a gate pad region extending from the gate electrode region; and a vertical channel semiconductor layer having a side surface facing the gate electrode region of the gate pattern. The gate pad region includes a first pad region having a thickness greater than a thickness of the gate electrode region. The first pad region includes an upper surface, a lower surface opposing the upper surface, and an outer side surface. The outer side surface has a lower outer side surface and an upper outer side surface, divided from each other by a boundary portion. The lower outer side surface extends from the lower surface, and a connection portion of the lower outer side surface and the lower surface has a rounded shape.

公开(公告)号：US11587932B2

公开(公告)日：2023-02-21

申请号：US17355272

申请日：2021-06-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byoung Deog Choi ,  Ji Woon Im

IPC: H01L27/108 ,  H01L21/764 ,  B82Y10/00 ,  H01L49/02

Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including a substrate; a first conductive pattern on the substrate; a second conductive pattern on the substrate and spaced apart from the first conductive pattern; an air spacer between the first conductive pattern and the second conductive pattern; and a quantum dot pattern covering an upper part of the air spacer.

公开(公告)号：US11345998B2

公开(公告)日：2022-05-31

申请号：US15988067

申请日：2018-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byung Sun Park ,  Ji Youn Seo ,  Ji Woon Im ,  Hyun Seok Lim ,  Byung Ho Chun ,  Yu Seon Kang ,  Hyuk Ho Kwon ,  Sung Jin Park ,  Tae Yong Eom ,  Dong Hyeop Ha

IPC: C23C16/455 ,  H01J37/32 ,  H01L21/02

Abstract: A deposition apparatus includes an upper shower head and a lower shower head within a process chamber, the upper shower head and the lower shower head facing each other, a support structure between the upper shower head and the lower shower head, the support structure being connected to the lower shower head to support a wafer, and a plasma process region between the wafer supported by the support structure and the lower shower head, wherein the lower shower head includes lower holes to jet a lower gas in a direction of the wafer, wherein the upper shower head includes upper holes to jet an upper gas in a direction of the wafer, and wherein the support structure includes through opening portions to discharge a portion of the lower gas jetted through the lower holes to a space between the support structure and the upper shower head.

公开(公告)号：US11098406B2

公开(公告)日：2021-08-24

申请号：US16043255

申请日：2018-07-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Il Jun Jeon ,  Ji Ho Uh ,  Je Hak Lee ,  Jun Sung Lee ,  Ji Woon Im

IPC: C23C16/458 ,  H01L21/687 ,  C23C16/50 ,  H01J37/32

Abstract: A substrate support unit according to an example embodiment of the present inventive concept may include a support having an upper surface on which a substrate is disposed; a coupling ring on which an edge of the substrate is disposed, the coupling ring being having an annular shape, wherein the coupling ring is disposed on an edge of the support; and an arm part for raising and lowering the coupling ring and the substrate, wherein the arm part is disposed below the coupling ring and under a portion of the coupling ring, wherein the coupling ring has a first region disposed on the arm part and a second region disposed around the first region, wherein the first region has a thickness greater than that of the second region.