公开(公告)号：US10896955B2

公开(公告)日：2021-01-19

申请号：US16401347

申请日：2019-05-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kangmook Lim ,  Sang Su Kim ,  Woo Seok Park ,  Sung Gi Hur

IPC: H01L27/01 ,  H01L29/06 ,  H01L21/8238 ,  H01L29/423 ,  H01L29/786 ,  H01L21/762 ,  H01L29/66 ,  H01L21/02 ,  H01L27/092 ,  H01L29/78

Abstract: A semiconductor device includes a substrate, an active region disposed on the substrate and extending in a first direction, a device isolation layer adjacent to the active region, a gate structure disposed in the active region, the gate structure extending in a second direction crossing the first direction, and covering a portion of the device isolation layer, a gate separation pattern contacting an end of the gate structure, and an impurity region disposed below the gate separation pattern and on the device isolation layer.

公开(公告)号：US09576955B2

公开(公告)日：2017-02-21

申请号：US14992683

申请日：2016-01-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Hwan Lee ,  Tae Yong Kwon ,  Sang Su Kim ,  Chang Jae Yang ,  Jung Han Lee ,  Hwan Wook Choi ,  Yeon Cheol Heo ,  Sang Hyuk Hong

IPC: H01L21/84 ,  H01L27/088 ,  H01L29/78 ,  H01L29/10 ,  H01L29/161 ,  H01L29/06

CPC classification number: H01L27/0886 ,  H01L21/823807 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/1054 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/7848 ,  H01L29/7849

Abstract: Semiconductor devices are provided. The semiconductor devices include active fins including a buffer layer disposed on a substrate and a channel layer disposed on the buffer layer and having a first second lattice constant higher than a lattice constant of the buffer layer, a gate structure covering the channel layer and intersecting the active fins, sidewall spacers disposed on both sidewalls of the gate structure, and capping layers disposed to contact lower surfaces of the sidewall spacers and having a width substantially the same as a width of the lower surfaces of the sidewall spacers.

Abstract translation: 提供半导体器件。 半导体器件包括活性鳍片，其包括设置在衬底上的缓冲层和设置在缓冲层上并具有高于缓冲层的晶格常数的第一晶格常数的沟道层，栅极结构覆盖沟道层并与 设置在栅极结构的两个侧壁上的活动翅片，侧壁间隔物以及设置成接触侧壁间隔物的下表面并具有与侧壁间隔物的下表面的宽度基本相同的宽度的封盖层。