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    IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME 有权

    公开(公告)号：US20250098352A1

    公开(公告)日：2025-03-20

    申请号：US18968655

    申请日：2024-12-04

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sang-Su PARK ,  Kwansik KIM ,  Changhwa KIM ,  Taemin KIM ,  Gyuhyun LIM

    IPC: H01L27/146

    Abstract: An image sensor includes a substrate including a first surface and a second surface which is opposite to the first portion, and a pixel isolation portion provided in the substrate and configured to isolate unit pixels from each other. The pixel isolation portion includes a first filling insulation pattern extending from the first surface toward the second surface and having an air gap region, the first filling insulation pattern including a first sidewall and a second sidewall which is opposite to the first sidewall, a conductive structure including a first portion on the first sidewall, a second portion on the second sidewall, and a connection portion connecting the first portion and the second portion, and an insulating liner provided between the first portion and the substrate and between the second portion and the substrate.

    IMAGE SENSOR
    3.
    发明公开
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20230146645A1

    公开(公告)日：2023-05-11

    申请号：US17887887

    申请日：2022-08-15

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hyuk Soon CHOI ,  Sang-Su PARK ,  Hee Sung SHIM ,  Dae Kun AHN ,  Min-Jun CHOI

    IPC: H01L27/146

    CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14627

    Abstract: An image sensor is provided. The image sensor includes a substrate including a plurality of unit pixels, each of unit pixels includes a photoelectric conversion element; a first trench formed in the substrate in a lattice shape to isolate the plurality of unit pixels; a plurality of first capacitor structures extended along a sidewall of the first trench in the first trench, including a first electrode, a second electrode, and a first dielectric layer between the first electrode and the second electrode; and a first capacitor isolation pattern at a lattice point of the first trench to isolate the plurality of first capacitor structures.

    IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME
    4.
    发明申请
    IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME 有权

    公开(公告)号：US20220238571A1

    公开(公告)日：2022-07-28

    申请号：US17522142

    申请日：2021-11-09

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sang-Su PARK ,  Kwansik Kim ,  Changhwa Kim ,  Taemin Kim ,  Gyuhyun Lim

    IPC: H01L27/146

    Abstract: An image sensor includes a substrate including a first surface and a second surface which is opposite to the first portion, and a pixel isolation portion provided in the substrate and configured to isolate unit pixels from each other. The pixel isolation portion includes a first filling insulation pattern extending from the first surface toward the second surface and having an air gap region, the first filling insulation pattern including a first sidewall and a second sidewall which is opposite to the first sidewall, a conductive structure including a first portion on the first sidewall, a second portion on the second sidewall, and a connection portion connecting the first portion and the second portion, and an insulating liner provided between the first portion and the substrate and between the second portion and the substrate.

    IMAGE SENSOR
    6.
    发明申请
    IMAGE SENSOR 有权

    公开(公告)号：US20220139995A1

    公开(公告)日：2022-05-05

    申请号：US17577615

    申请日：2022-01-18

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Changhwa KIM ,  JungHun KIM ,  Sang-Su PARK ,  Beomsuk LEE ,  Gang ZHANG ,  Jaesung HUR

    IPC: H01L27/146 ,  H01L27/148 ,  H04N5/335 ,  G02B5/20 ,  H01L25/16

    Abstract: Disclosed is an image sensor including a substrate having a first surface and a second surface opposite to each other, a first photoelectric conversion region and a second photoelectric conversion region in the substrate, a through electrode between the first and second photoelectric conversion regions, an insulation structure on the second surface of the substrate, a first color filter and a second color filter respectively provided on the first and second photoelectric conversion regions, and a photoelectric conversion layer on the insulation structure and electrically connected to the through electrode. The through electrode include a first end adjacent to the first surface and a second end adjacent to the second surface. The first end has a non-planar shape.

    IMAGE SENSOR
    7.
    发明申请
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20200176504A1

    公开(公告)日：2020-06-04

    申请号：US16787408

    申请日：2020-02-11

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Changhwa KIM ,  JungHun KIM ,  Sang-Su PARK ,  Beomsuk LEE ,  Gang ZHANG ,  Jaesung HUR

    IPC: H01L27/146 ,  H01L25/16 ,  G02B5/20 ,  H04N5/335 ,  H01L27/148

    Abstract: Disclosed is an image sensor including a substrate having a first surface and a second surface opposite to each other, a first photoelectric conversion region and a second photoelectric conversion region in the substrate, a through electrode between the first and second photoelectric conversion regions, an insulation structure on the second surface of the substrate, a first color filter and a second color filter respectively provided on the first and second photoelectric conversion regions, and a photoelectric conversion layer on the insulation structure and electrically connected to the through electrode. The through electrode include a first end adjacent to the first surface and a second end adjacent to the second surface. The first end has a non-planar shape.

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