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公开(公告)号:US20230146645A1
公开(公告)日:2023-05-11
申请号:US17887887
申请日:2022-08-15
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyuk Soon CHOI , Sang-Su PARK , Hee Sung SHIM , Dae Kun AHN , Min-Jun CHOI
IPC: H01L27/146
CPC classification number: H01L27/1463 , H01L27/14621 , H01L27/14636 , H01L27/14627
Abstract: An image sensor is provided. The image sensor includes a substrate including a plurality of unit pixels, each of unit pixels includes a photoelectric conversion element; a first trench formed in the substrate in a lattice shape to isolate the plurality of unit pixels; a plurality of first capacitor structures extended along a sidewall of the first trench in the first trench, including a first electrode, a second electrode, and a first dielectric layer between the first electrode and the second electrode; and a first capacitor isolation pattern at a lattice point of the first trench to isolate the plurality of first capacitor structures.
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2.
公开(公告)号:US20170338258A1
公开(公告)日:2017-11-23
申请号:US15625117
申请日:2017-06-16
Applicant: Samsung Electronics Co., Ltd.
Inventor: Tae Chan KIM , Dong Ki MIN , Kwang Hyun LEE , Yo Hwan NOH , Se Hwan YUN , Dae Kwan KIM , Young Jin KIM , Wang Hyun KIM , Hyuk Soon CHOI
IPC: H01L27/146 , G02B3/00 , H04N5/3745 , H04N5/378 , H04N5/355 , H04N5/353 , H04N5/347 , G02B5/20 , H04N9/04 , H04N5/374
CPC classification number: H01L27/1463 , G02B3/0056 , G02B5/201 , H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14641 , H01L27/14645 , H04N5/347 , H04N5/3535 , H04N5/35554 , H04N5/3742 , H04N5/37457 , H04N5/378 , H04N9/045
Abstract: An image sensor according to an example embodiment concepts includes a pixel array including pixels, and each of the pixels includes photoelectric conversion elements. The photoelectric conversion elements independently operating to detect a phase difference. The image sensor further includes a control circuit configured to independently control exposure times of each of the photoelectric conversion elements included in each of the pixels.
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