公开(公告)号：US20190026181A1

公开(公告)日：2019-01-24

申请号：US15901175

申请日：2018-02-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji-Suk KIM ,  Sang-In PARK ,  IL-Han PARK ,  Sang-Yong YOON ,  Gyu-Seon RHIM ,  Sung-Woon CHOI

IPC: G06F11/10 ,  G11C29/52 ,  H03M13/37 ,  G11C16/28

Abstract: A method for controlling error check and correction (ECC) of a non-volatile memory device includes storing write data in a plurality of storing regions. The write data may be generated by performing ECC encoding. Individual ECC decoding may be performed based on each of a plurality of read data read out from the storing regions. Logic operation data may be provided by performing a logic operation of the read data when the individual ECC decoding fails with respect to all of the read data. Combined ECC decoding may be performed based on the logic operation data.

公开(公告)号：US20140376310A1

公开(公告)日：2014-12-25

申请号：US14272906

申请日：2014-05-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Si-Hwan KIM ,  Sang-Yong YOON ,  Kyung-Ryun KIM

IPC: G11C16/34 ,  G11C16/12

CPC classification number: G11C16/3427 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/3459

Abstract: A method of writing data in a non-volatile memory device includes receiving a program command and a first row address corresponding to a first word line; performing a first partial programming operation with respect to first memory cells coupled to the first word line; performing a second partial programming operation with respect to second memory cells coupled to a second word line adjacent to the first word line; performing a first verification operation by verifying the first partial programming operation; and selectively performing a first additional programming operation with respect to the first memory cells depending on a result of the first verification operation.

Abstract translation: 一种在非易失性存储器件中写入数据的方法包括：接收与第一字线对应的程序命令和第一行地址; 对与第一字线耦合的第一存储器单元执行第一部分编程操作; 对与第一字线相邻的第二字线耦合的第二存储器单元执行第二部分编程操作; 通过验证第一部分编程操作来执行第一验证操作; 以及根据所述第一验证操作的结果选择性地执行关于所述第一存储器单元的第一附加编程操作。