公开(公告)号：US20150109048A1

公开(公告)日：2015-04-23

申请号：US14521868

申请日：2014-10-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo-young YANG ,  Ki-hong KIM ,  Sang-jun CHOI ,  Young-eal KIM ,  Seong-yong PARK

IPC: H01L29/10 ,  H03K17/687 ,  H01L29/45 ,  H01L29/80 ,  H01L29/24

CPC classification number: H01L29/1029 ,  H01L29/24 ,  H01L29/45 ,  H01L29/80 ,  H01L45/085 ,  H01L45/1206 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146 ,  H03K17/687

Abstract: A transistor includes a channel forming layer on a substrate, a gate on the channel forming layer and including an electrochemically indifferent metal, a solid electrolyte layer between the channel forming layer and the gate, the solid electrolyte layer is formed as a stack structure with the gate on the channel forming layer, an active metal layer including an electrochemically active metal capable of enabling channel switching by using an oxidation-reduction reaction of the electrochemically active metal so that the active metal layer forms a metal channel in a channel region between the channel forming layer and the solid electrolyte layer, and a source and a drain electrically connected to the active metal layer.

Abstract translation: 晶体管包括在衬底上的沟道形成层，沟道形成层上的栅极，并且包括电化学上不同的金属，在沟道形成层和栅极之间的固体电解质层，固体电解质层形成为具有 沟道形成层上的栅极，包含电化学活性金属的活性金属层，其能够通过使用电化学活性金属的氧化还原反应来实现沟道切换，使得活性金属层在沟道区域中形成金属沟道 形成层和固体电解质层，以及与活性金属层电连接的源极和漏极。