公开(公告)号：US10134606B2

公开(公告)日：2018-11-20

申请号：US14712920

申请日：2015-05-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-yoon Woo ,  Hyun-woo Kim ,  Ju-hyung An ,  Jin-young Yoon

IPC: H01L21/027 ,  H01L21/3213 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/34 ,  G03F7/039 ,  G03F7/09 ,  H01L21/033 ,  H01L21/308 ,  H01L21/311 ,  H01L27/108

Abstract: A method of forming patterns may use an organic reflection-preventing film including a polymer having an acid-liable group. A photoresist film is formed on the organic reflection-preventing film. A first area selected from the photoresist film is exposed to generate an acid in the first area. Hydrophilicity of a first surface of the organic reflection-preventing film facing the first area of the photoresist film may be increased. The photoresist film including the exposed first area is developed to remove a non-exposed area of the photoresist film. The organic reflection-preventing film and a target layer are anisotropically etched by using the first area of the photoresist film as an etch mask.