公开(公告)号：US20230209825A1

公开(公告)日：2023-06-29

申请号：US18047109

申请日：2022-10-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minkyung Kang ,  Suhyeong Lee ,  Seohee Park ,  Gukhyon Yon ,  Yongsuk Tak

IPC: H10B43/27 ,  H10B43/35

CPC classification number: H10B43/27 ,  H10B43/35

Abstract: Provided is a method of manufacturing a semiconductor device, the method including: forming a mold structure comprising insulation layers and sacrificial layers alternately and repeatedly stacked on a substrate; forming a channel hole extending through the mold structure; forming a blocking layer in the channel hole; forming a charge storage layer on the blocking layer; forming a tunnel insulation layer including a doping element on the charge storage layer; performing heat treatment to diffuse the doping element from the tunnel insulation layer to the charge storage layer; and forming a channel layer on the tunnel insulation layer.

公开(公告)号：US12213304B2

公开(公告)日：2025-01-28

申请号：US17825441

申请日：2022-05-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Teawon Kim ,  Yurim Kim ,  Seohee Park ,  Kong-Soo Lee ,  Yong Suk Tak

IPC: H01L27/108 ,  H10B12/00

Abstract: A semiconductor device includes: a substrate; a conductive line extending on the substrate in a first horizontal direction; an isolation insulating layer extending on the substrate and the conductive line in a second horizontal direction intersecting with the first horizontal direction, and defining a channel trench extending through the isolation insulating layer from an upper surface of the isolation insulating layer to a lower surface of the isolation insulating layer; a crystalline oxide semiconductor layer extending along at least a portion of an inner side surface of the channel trench and at least a portion of a bottom surface of the channel trench and coming in contact with the conductive line; and a gate electrode extending on the crystalline oxide semiconductor layer inside the channel trench in the second horizontal direction.

公开(公告)号：US20240215225A1

公开(公告)日：2024-06-27

申请号：US18391835

申请日：2023-12-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Teawon Kim ,  Seohee Park ,  Yongsuk Tak ,  Minkyung Kang ,  Joonnyung Heo

IPC: H10B12/00 ,  H01L21/764

CPC classification number: H10B12/482 ,  H01L21/764 ,  H10B12/0335 ,  H10B12/315

Abstract: A semiconductor device includes a line structure on the lower structure and including a conductive pattern and an insulating capping pattern on the conductive pattern, a contact structure including a lower portion adjacent to a side surface of the line structure and an upper portion on the lower portion, a spacer structure between a side surface of the lower portion of the contact structure and the side surface of the line structure, an insulating separation pattern on the spacer structure, and a protective layer between the upper portion of the contact structure and the insulating separation pattern. The spacer structure includes an internal spacer, an external spacer, and an air gap between the internal spacer and the external spacer. Regions of the internal spacer and the external spacer exposed by the air gap include an oxide. The insulating separation pattern seals at least a portion of an upper portion of the air gap.

公开(公告)号：US20240081047A1

公开(公告)日：2024-03-07

申请号：US18351422

申请日：2023-07-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Teawon Kim ,  Seohee Park ,  Yongsuk Tak ,  Minkyung Kang ,  Joonnyung Heo

IPC: H10B12/00

CPC classification number: H10B12/482 ,  H10B12/02 ,  H10B12/315 ,  H10B12/34

Abstract: A semiconductor device includes a conductive pattern and a spacer structure disposed on a side surface of the conductive pattern. The spacer structure includes an inner spacer in contact with the side surface of the conductive pattern, an outer spacer spaced apart from the side surface of the conductive pattern, and an air gap disposed between the inner spacer and the outer spacer. The inner spacer includes an inner oxidized region exposed by the air gap. A concentration of oxygen in the inner oxidized region has a gradient in which the oxygen concentration decreases in a direction away from the air gap.