公开(公告)号：US20220068852A1

公开(公告)日：2022-03-03

申请号：US17501133

申请日：2021-10-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju-Il CHOI ,  Pil-Kyu KANG ,  Hoechul KIM ,  Hoonjoo NA ,  Jaehyung PARK ,  Seongmin SON

IPC: H01L23/00 ,  H01L25/16 ,  H01L27/146 ,  H01L23/31

Abstract: A semiconductor device and a semiconductor package, the device including a first buffer dielectric layer on a first dielectric layer; a second dielectric layer and a second buffer dielectric layer sequentially disposed on the first buffer dielectric layer, the second buffer dielectric layer being in contact with the first buffer dielectric layer; and a pad interconnection structure that penetrates the first buffer dielectric layer and the second buffer dielectric layer, wherein the pad interconnection structure includes copper and tin.

公开(公告)号：US20240274593A1

公开(公告)日：2024-08-15

申请号：US18414750

申请日：2024-01-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongmin SON ,  Seokho KIM ,  Sumin PARK ,  Kyuha LEE ,  Joohee JANG

IPC: H01L27/02 ,  H01L23/13 ,  H01L23/58 ,  H01L27/118

CPC classification number: H01L27/0207 ,  H01L23/13 ,  H01L23/585 ,  H01L2027/11875

Abstract: A semiconductor device includes a first substrate structure and a second substrate structure stacked on the first substrate structure. The first substrate structure includes a plurality of first bonding pads in a first die region of a first substrate, a first passivation layer on the first substrate and exposing the first bonding pads, and a plurality of first dummy patterns in the first passivation layer in a first scribe region. The second substrate structure includes a plurality of second bonding pads in a second die region of a second substrate, a second passivation layer on the second substrate and exposing the second bonding pads, and a plurality of second dummy patterns in the second passivation layer in a second scribe region. The first bonding pad and the second bonding pad are directly bonded to each other.

公开(公告)号：US20200098711A1

公开(公告)日：2020-03-26

申请号：US16404841

申请日：2019-05-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju-Il CHOI ,  Pil-Kyu KANG ,  Hoechul KIM ,  Hoonjoo NA ,  Jaehyung PARK ,  Seongmin SON

IPC: H01L23/00 ,  H01L25/16

Abstract: A semiconductor device and a semiconductor package, the device including a first buffer dielectric layer on a first dielectric layer; a second dielectric layer and a second buffer dielectric layer sequentially disposed on the first buffer dielectric layer, the second buffer dielectric layer being in contact with the first buffer dielectric layer; and a pad interconnection structure that penetrates the first buffer dielectric layer and the second buffer dielectric layer, wherein the pad interconnection structure includes copper and tin.

公开(公告)号：US20250022823A1

公开(公告)日：2025-01-16

申请号：US18904203

申请日：2024-10-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-Il CHOI ,  Pil-Kyu KANG ,  Hoechul KIM ,  Hoonjoo NA ,  Jaehyung PARK ,  Seongmin SON

IPC: H01L23/00 ,  H01L23/31 ,  H01L25/16 ,  H01L27/146

Abstract: A semiconductor device and a semiconductor package, the device including a first buffer dielectric layer on a first dielectric layer; a second dielectric layer and a second buffer dielectric layer sequentially disposed on the first buffer dielectric layer, the second buffer dielectric layer being in contact with the first buffer dielectric layer; and a pad interconnection structure that penetrates the first buffer dielectric layer and the second buffer dielectric layer, wherein the pad interconnection structure includes copper and tin.