公开(公告)号：US20170059837A1

公开(公告)日：2017-03-02

申请号：US15172390

申请日：2016-06-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hoyeon KIM ,  Seongsue KIM

IPC: G02B19/00 ,  G21K1/06 ,  G03F7/20 ,  H05G2/00

CPC classification number: G02B19/0019 ,  G02B19/0095 ,  G21K1/062 ,  H05G2/005 ,  H05G2/008

Abstract: An extreme ultraviolet (EUV) light generator includes a collecting mirror having a first focal point and a second focal point, the first focal point being closer to the collecting mirror than the second focal point, a laser to generate a laser beam and to radiate the laser beam toward the first focal point of the collecting mirror, and a droplet generator to generate a droplet and to discharge the droplet at the first focal point of the collecting mirror, wherein the collecting mirror includes a concave reflective surface, a through hole in a center of the reflective surface, and a drip hole between the through hole and an outer circumferential surface of the reflective surface.

Abstract translation: 一种极紫外（EUV）光发生器包括具有第一焦点和第二焦点的收集镜，第一焦点比第二焦点更靠近收集镜，激光产生激光束并辐射 激光束朝向收集镜的第一焦点，以及液滴发生器，用于产生液滴并在收集反射镜的第一焦点处排出液滴，其中收集反射镜包括凹面反射表面， 反射面的中心，以及通孔与反射面的外周面之间的滴漏孔。

公开(公告)号：US20210389662A1

公开(公告)日：2021-12-16

申请号：US17328008

申请日：2021-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwanseok SEO ,  Seongsue KIM ,  Changyoung JEONG

IPC: G03F1/26 ,  G03F1/58

Abstract: A phase shift mask for extreme ultraviolet lithography includes a substrate, a reflective layer on the substrate, a capping layer on the reflective layer, a buffer pattern on the capping layer, the buffer pattern including an opening exposing a surface of the capping layer, and an absorber pattern on the buffer pattern, the absorber pattern including a refractive index less than a refractive index of the buffer pattern and a thickness greater than a thickness of the buffer pattern. The buffer pattern includes a material having an etch selectivity with respect to the absorber pattern and the capping layer.