公开(公告)号：US20240213199A1

公开(公告)日：2024-06-27

申请号：US18227646

申请日：2023-07-28

申请人： Samsung Electronics Co., Ltd.

发明人： Sungwoo PARK ,  Yongjae KIM ,  Heonwoo KIM ,  Seung-Kwan RYU

IPC分类号： H01L23/00 ,  H01L23/498 ,  H01L25/065

CPC分类号： H01L24/13 ,  H01L23/49816 ,  H01L24/16 ,  H01L24/17 ,  H01L25/0657 ,  H01L2224/13017 ,  H01L2224/16225 ,  H01L2224/1703 ,  H01L2225/06517 ,  H01L2225/06544 ,  H01L2924/37001

摘要： The present disclosure provides semiconductor packages and methods of fabricating the same. In some embodiments, a semiconductor package includes a substrate including first and second regions, a first pad on the first region, a second pad on the second region, a first dielectric layer on the first region and including a first opening exposing the first pad, a second dielectric layer on the second region and including a second opening exposing the second pad, a first bump structure on the first pad and in the first opening, and a second bump structure on the second pad and in the second opening. A thickness of the first dielectric layer is greater than a thickness of the second dielectric layer. A distance between the substrate and an uppermost end of the first bump structure is longer than a distance between the substrate and an uppermost end of the second bump structure.