公开(公告)号：US20160020303A1

公开(公告)日：2016-01-21

申请号：US14670324

申请日：2015-03-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwi-Chan JUN ,  Deok-Han BAE ,  Hyun-Seung SONG ,  Seung-Seok HA

IPC: H01L29/66 ,  H01L21/321 ,  H01L21/311 ,  H01L21/768 ,  H01L21/033

CPC classification number: H01L29/66795 ,  H01L21/31144 ,  H01L21/76897 ,  H01L29/66545 ,  H01L29/6656

Abstract: Embodiments of the disclosure relate to a method for manufacturing a semiconductor device including a field effect transistor with improved electrical characteristics. According to embodiments of the disclosure, self-aligned contact plugs may be effectively formed using a metal hard mask portion disposed on a gate portion. In addition, a process margin of a photoresist mask for the formation of the self-aligned contact plugs may be improved by using the metal hard mask portion.

Abstract translation: 本公开的实施例涉及一种用于制造包括具有改善的电特性的场效应晶体管的半导体器件的方法。 根据本公开的实施例，可以使用设置在栅极部分上的金属硬掩模部分来有效地形成自对准接触插塞。 此外，通过使用金属硬掩模部分，可以提高用于形成自对准接触插塞的光刻胶掩模的工艺余量。