公开(公告)号：US09859398B2

公开(公告)日：2018-01-02

申请号：US15438868

申请日：2017-02-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun You ,  Se-Wan Park ,  Seung-Woo Do ,  In-Won Park ,  Sug-Hyun Sung

IPC: H01L29/66 ,  H01L21/306 ,  H01L29/417 ,  H01L21/762 ,  H01L21/308 ,  H01L29/78 ,  H01L29/165

CPC classification number: H01L29/66545 ,  H01L21/30604 ,  H01L21/3085 ,  H01L21/76224 ,  H01L29/165 ,  H01L29/41766 ,  H01L29/66795 ,  H01L29/6681 ,  H01L29/66818 ,  H01L29/7848 ,  H01L29/785

Abstract: A method for fabricating a semiconductor device is provided. The method includes forming a first fin-shaped pattern including an upper part and a lower part on a substrate, forming a second fin-shaped pattern by removing a part of the upper part of the first fin-shaped pattern, forming a dummy gate electrode intersecting with the second fin-shaped pattern on the second fin-shaped pattern, and forming a third fin-shaped pattern by removing a part of an upper part of the second fin-shaped pattern after forming the dummy gate electrode, wherein a width of the upper part of the second fin-shaped pattern is smaller than a width of the upper part of the first fin-shaped pattern and is greater than a width of an upper portion of the third fin-shaped pattern.