公开(公告)号：US11581367B2

公开(公告)日：2023-02-14

申请号：US17209660

申请日：2021-03-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongho Ahn ,  Segab Kwon ,  Chungman Kim ,  Kwangmin Park ,  Zhe Wu ,  Seunggeun Yu ,  Wonjun Lee ,  Jabin Lee ,  Jinwoo Lee

IPC: H01L27/24 ,  H01L45/00

Abstract: A semiconductor device includes a semiconductor substrate, a peripheral device on the semiconductor substrate, a lower insulating structure on the semiconductor substrate and covering the peripheral device, a first conductive line on the lower insulating structure, a memory cell structure on the first conductive line, and a second conductive line on the memory cell structure. The memory cell structure may include an information storage material pattern and a selector material pattern on the lower insulating structure in a vertical direction. The selector material pattern may include a first selector material layer including a first material and a second selector material layer including a second material. The second selector material layer may have a threshold voltage drift higher than that of the first material. The second selector material layer may have a second width narrower than a first width of the first selector material layer.

公开(公告)号：US12063793B2

公开(公告)日：2024-08-13

申请号：US17362075

申请日：2021-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiyeon Yang ,  Bonwon Koo ,  Segab Kwon ,  Chungman Kim ,  Yongyoung Park ,  Dongho Ahn ,  Seunggeun Yu ,  Changseung Lee

IPC: H10B63/00 ,  H01L29/24 ,  H10N70/00 ,  H10N70/20

CPC classification number: H10B63/24 ,  H01L29/24 ,  H10N70/245 ,  H10N70/826 ,  H10N70/8833

Abstract: Provided are a chalcogen compound having ovonic threshold switching characteristics, and a switching device, a semiconductor device, and/or a semiconductor apparatus which include the chalcogen compound. The chalcogen compound includes five or more elements and may have stable switching characteristics with a low off-current value (leakage current value). The chalcogen compound includes: selenium (Se) and tellurium (Te); a first element comprising at least one of indium (In), aluminum (Al), strontium (Sr), and calcium (Ca); and a second element including germanium (Ge) and/or tin (Sn), and may further include at least one of arsenic (As), antimony (Sb), and bismuth (Bi).

公开(公告)号：US11812619B2

公开(公告)日：2023-11-07

申请号：US17227852

申请日：2021-04-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinwoo Lee ,  Zhe Wu ,  Dongsung Choi ,  Chungman Kim ,  Seunggeun Yu ,  Jabin Lee ,  Soyeon Choi

IPC: H10B63/00 ,  H10N70/00

CPC classification number: H10B63/84 ,  H10N70/826 ,  H10N70/841

Abstract: A resistive memory device includes a first conductive line extending in a first horizontal direction on a substrate, a plurality of second conductive lines separated from the first conductive line in a vertical direction and extending in a second horizontal direction intersecting with the first horizontal direction, on the substrate, a plurality of memory cells respectively connected between the first conductive line and one second conductive line selected from among the plurality of second conductive lines at a plurality of intersection points between the first conductive line and the plurality of second conductive lines, each of the plurality of memory cells including a selection device and a resistive memory pattern, and a bottom electrode shared by the plurality of memory cells, the bottom electrode having a variable thickness in the first horizontal direction, and including a top surface having a concave-convex shape.