公开(公告)号：US20230267051A1

公开(公告)日：2023-08-24

申请号：US18112702

申请日：2023-02-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanghyun PARK ,  Taikuin MUN ,  Gunho LEE ,  Jaehyeok LEE ,  Taesub KIM ,  Heangsu KIM ,  Myungkeun OH ,  Seunghyup LEE ,  Hwansoo JEON ,  Hakbong CHO ,  Sunghyun AN

IPC: G06F11/14 ,  G06F1/16

CPC classification number: G06F11/1458 ,  G06F1/1626 ,  G06F2201/84

Abstract: A method and a device configured to transmit information related to a device to a first electronic device through a communication module in accordance with a request of the first electronic device; establish a communication connection with a second electronic device based on the information; receive a backup request for data stored in the device from the first electronic device; generate backup data based on the backup request; transmit the generated backup data to the second electronic device; and reset the device based on a device reset request in a case of receiving the device reset request from the second electronic device.

公开(公告)号：US20150333202A1

公开(公告)日：2015-11-19

申请号：US14711420

申请日：2015-05-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihoon AHN ,  Yongwoo JEON ,  Jungwoo KIM ,  Haeseok PARK ,  Seungeon AHN ,  Seunghyup LEE ,  Myounghoon JUNG ,  Hyuksoon CHOI

IPC: H01L31/0352 ,  H01L31/0336 ,  H01L31/18 ,  H01L31/105

CPC classification number: H01L31/0336 ,  H01L27/14601 ,  H01L27/14643 ,  H01L31/0352 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/105 ,  H01L31/18 ,  H01L31/184 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

Abstract: Example embodiments relate to a lateral type photodiode including a substrate, an insulation mask layer formed on the substrate, and a first type semiconductor layer, an active layer, and a second type semiconductor layer that contact a surface of the insulation mask layer and that are sequentially disposed in a direction substantially parallel to the surface of the insulation mask layer. The insulation mask layer includes a through hole, and the first type semiconductor layer, the active layer, and the second type semiconductor layer are sequentially formed from the through hole by using a lateral overgrowth method.

Abstract translation: 示例性实施例涉及包括衬底，形成在衬底上的绝缘掩模层和与绝缘掩模层的表面接触的第一类型半导体层，有源层和第二类型半导体层的横向型光电二极管， 依次设置在与绝缘掩模层的表面基本平行的方向上。 绝缘掩模层包括通孔，并且通过使用横向过度生长法从通孔顺序地形成第一类型半导体层，有源层和第二类型半导体层。