公开(公告)号：US20160069747A1

公开(公告)日：2016-03-10

申请号：US14786572

申请日：2014-04-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyungue HONG ,  Sunghyun NAM ,  Sookyoung ROH ,  Haeseok PARK ,  Seokho YUN

IPC: G01J5/00 ,  G01J5/08

CPC classification number: G01J5/00 ,  G01J5/08 ,  G01J5/0818 ,  G01J5/0837 ,  G01J5/0853 ,  G01J5/44 ,  G01J2005/0077

Abstract: A thermal radiation sensor may include a thermal absorption layer, an optical resonator surrounding the thermal absorption layer, and a plasmonic absorber provided on the thermal absorption layer, and thus, the thermal radiation sensor may have high sensitivity and may be miniaturized.

Abstract translation: 热辐射传感器可以包括热吸收层，围绕热吸收层的光学谐振器和设置在热吸收层上的等离子体吸收体，因此热辐射传感器可以具有高灵敏度并且可以小型化。

公开(公告)号：US20150333202A1

公开(公告)日：2015-11-19

申请号：US14711420

申请日：2015-05-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihoon AHN ,  Yongwoo JEON ,  Jungwoo KIM ,  Haeseok PARK ,  Seungeon AHN ,  Seunghyup LEE ,  Myounghoon JUNG ,  Hyuksoon CHOI

IPC: H01L31/0352 ,  H01L31/0336 ,  H01L31/18 ,  H01L31/105

CPC classification number: H01L31/0336 ,  H01L27/14601 ,  H01L27/14643 ,  H01L31/0352 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/105 ,  H01L31/18 ,  H01L31/184 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

Abstract: Example embodiments relate to a lateral type photodiode including a substrate, an insulation mask layer formed on the substrate, and a first type semiconductor layer, an active layer, and a second type semiconductor layer that contact a surface of the insulation mask layer and that are sequentially disposed in a direction substantially parallel to the surface of the insulation mask layer. The insulation mask layer includes a through hole, and the first type semiconductor layer, the active layer, and the second type semiconductor layer are sequentially formed from the through hole by using a lateral overgrowth method.

Abstract translation: 示例性实施例涉及包括衬底，形成在衬底上的绝缘掩模层和与绝缘掩模层的表面接触的第一类型半导体层，有源层和第二类型半导体层的横向型光电二极管， 依次设置在与绝缘掩模层的表面基本平行的方向上。 绝缘掩模层包括通孔，并且通过使用横向过度生长法从通孔顺序地形成第一类型半导体层，有源层和第二类型半导体层。