公开(公告)号：US20140252420A1

公开(公告)日：2014-09-11

申请号：US14138434

申请日：2013-12-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shinwook Yi ,  Hyoungsoo Ko ,  Kyungho Lee ,  Youngwoo Jung ,  Heegeun Jeong

IPC: H01L27/148

CPC classification number: H01L27/14605 ,  H01L27/14614 ,  H01L27/1463 ,  H01L27/1464

Abstract: An image sensor device can include device isolation regions in a substrate and a photoelectric conversion portion in the substrate that can be between the device isolation regions. A transfer gate of the image sensor device, can be located over, and be electrically coupled to, the photoelectric conversion portion. The transfer gate can include at least two protrusions, that are separated from the device isolation regions, and that protrude toward the photoelectric conversion portion.

Abstract translation: 图像传感器装置可以包括衬底中的器件隔离区域和衬底中可位于器件隔离区域之间的光电转换部分。 图像传感器装置的传输门可以位于光电转换部分的上方并与之电耦合。 传输门可以包括与器件隔离区分离的至少两个突起，并且朝向光电转换部分突出。