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公开(公告)号:US20240121963A1
公开(公告)日:2024-04-11
申请号:US18474307
申请日:2023-09-26
Applicant: Samsung Electronics Co., Ltd.
Inventor: So Hyun Lee , Kang-Oh Yun , Dong Jin Lee , Jun Hee Lim
Abstract: A semiconductor memory device includes: a substrate including a first region and a second region, the first region includes a peripheral circuit and a first active region (FAR), and the second region includes memory cell blocks. The FAR includes a FAR first extension extending in a first direction, a FAR second extension extending in a second direction, and a FAR third extension extending in a third direction. The FAR first extension, the FAR second extension, and the FAR third extension form an angle greater than 90 degrees relative to one another. The device includes a first pass transistor circuit configured to transmit driving signals, and the first pass transistor circuit includes a FAR first gate structure on the FAR first extension, a FAR second gate structure on the FAR second extension, a FAR third gate structure on the FAR third extension, and a first shared source/drain.
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公开(公告)号:US12279426B2
公开(公告)日:2025-04-15
申请号:US17468917
申请日:2021-09-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: So Hyun Lee , Kang-Oh Yun
Abstract: A semiconductor device includes a first active region and a second active region arranged along a first direction in a substrate, an element isolation layer extending in a second direction in the substrate to isolate the first active region and the second active region, a first gate electrode extending in the first direction on the first active region, a second gate electrode extending in the first direction on the second active region, and an isolation impurity region containing impurities of a first conductivity type in the substrate and disposed below the element isolation layer, in which the isolation impurity region includes a first isolation region and a second isolation region spaced apart from each other in the second direction, and at least a part of the substrate interposed between the first gate electrode and the second gate electrode is interposed between the first isolation region and the second isolation region.
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公开(公告)号:US20220208779A1
公开(公告)日:2022-06-30
申请号:US17468917
申请日:2021-09-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: So Hyun Lee , Kang-Oh Yun
IPC: H01L27/11524 , H01L27/11519 , H01L27/11556 , H01L27/11526 , G11C5/06 , H01L29/06
Abstract: A semiconductor device includes a first active region and a second active region arranged along a first direction in a substrate, an element isolation layer extending in a second direction in the substrate to isolate the first active region and the second active region, a first gate electrode extending in the first direction on the first active region, a second gate electrode extending in the first direction on the second active region, and an isolation impurity region containing impurities of a first conductivity type in the substrate and disposed below the element isolation layer, in which the isolation impurity region includes a first isolation region and a second isolation region spaced apart from each other in the second direction, and at least a part of the substrate interposed between the first gate electrode and the second gate electrode is interposed between the first isolation region and the second isolation region.
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