Method and device for providing content in mobile communication system

    公开(公告)号:US10158698B2

    公开(公告)日:2018-12-18

    申请号:US14433626

    申请日:2013-10-04

    Abstract: A method for transmitting data in a core cache server of a communication system, according to one embodiment of the present invention, comprises the steps of: receiving, from a source base station, a core cache search signal; selecting a relay core cache unit according to the received core cache search signal; and transmitting content data to a target base station through the selected relay core cache unit. A cache server for transmitting and receiving data in a communication system, according to another embodiment of the present invention, comprises: one or more core cache units for storing content data; a receiving unit for receiving, from a source base station, a core cache search signal; a control unit for selecting a relay core cache unit among the one or more core cache units according to the received core cache search signal; and a transmission unit for transmitting the content data to a target base station through the selected relay core cache unit. When the present invention is used, the source base station can continuously provide content to a terminal by transmitting session information and the content to a target base station during a handover of the terminal by using a logical interface between base stations in an LTE system, and in this case, a core cache function is additionally provided such that it is possible to smoothly provide the content to a base station even when moving to a server that does not have a cache function. Thus, backhaul costs caused by a handover are reduced and a user can be provided with improved quality of experience.

    SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

    公开(公告)号:US20240121963A1

    公开(公告)日:2024-04-11

    申请号:US18474307

    申请日:2023-09-26

    CPC classification number: H10B43/40 H10B43/27

    Abstract: A semiconductor memory device includes: a substrate including a first region and a second region, the first region includes a peripheral circuit and a first active region (FAR), and the second region includes memory cell blocks. The FAR includes a FAR first extension extending in a first direction, a FAR second extension extending in a second direction, and a FAR third extension extending in a third direction. The FAR first extension, the FAR second extension, and the FAR third extension form an angle greater than 90 degrees relative to one another. The device includes a first pass transistor circuit configured to transmit driving signals, and the first pass transistor circuit includes a FAR first gate structure on the FAR first extension, a FAR second gate structure on the FAR second extension, a FAR third gate structure on the FAR third extension, and a first shared source/drain.

    WALL MOUNT AND DISPLAY APPARATUS HAVING THE SAME

    公开(公告)号:US20210068543A1

    公开(公告)日:2021-03-11

    申请号:US16814516

    申请日:2020-03-10

    Abstract: A wall mount including a guide member. The guide member includes a first guide coupling portion positioned in one end portion of the guide member, a second guide coupling portion positioned in another end portion of the guide member, the second guide coupling portion being symmetrical to the first guide coupling portion, a third guide coupling portion positioned between the first guide coupling portion and a center of the guide member, and a fourth guide coupling portion positioned between the second guide coupling portion and the center of the guide member and being symmetrical to the third guide coupling portion; a first fixing bracket coupleable to the first guide coupling portion or the third guide coupling portion; and a second fixing bracket coupleable to the second guide coupling portion or the fourth guide coupling portion.

    SEMICONDUCTOR DEVICES HAVING TRANSISTORS CAPABLE OF ADJUSTING THRESHOLD VOLTAGE THROUGH BODY BIAS EFFECT
    10.
    发明申请
    SEMICONDUCTOR DEVICES HAVING TRANSISTORS CAPABLE OF ADJUSTING THRESHOLD VOLTAGE THROUGH BODY BIAS EFFECT 有权
    具有可通过BODY偏置效应调节阈值电压的晶体管的半导体器件

    公开(公告)号:US20130264630A1

    公开(公告)日:2013-10-10

    申请号:US13785810

    申请日:2013-03-05

    Abstract: Semiconductor devices have transistors capable of adjusting threshold voltages through a body bias effect. The semiconductor devices include transistors having a front gate on a substrate, a back gate between adjacent transistors, and a carrier storage layer configured to surround the back gate and to trap a carrier. A threshold voltage of a transistor may be changed in response to voltage applied to the back gate. Related fabrication methods are also described.

    Abstract translation: 半导体器件具有能够通过体偏置效应来调节阈值电压的晶体管。 半导体器件包括在衬底上具有前栅极的晶体管,相邻晶体管之间的背栅极和被配置为围绕背栅极并捕获载流子的载流子存储层。 晶体管的阈值电压可以响应于施加到背栅的电压而改变。 还描述了相关的制造方法。

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