Abstract:
Semiconductor devices have transistors capable of adjusting threshold voltages through a body bias effect. The semiconductor devices include transistors having a front gate on a substrate, a back gate between adjacent transistors, and a carrier storage layer configured to surround the back gate and to trap a carrier. A threshold voltage of a transistor may be changed in response to voltage applied to the back gate. Related fabrication methods are also described.
Abstract:
A display apparatus includes a frame case to support four sides of a display panel. The frame case is formed by bending a bar-shaped member made of a metal into a rectangular ring shape. Opposite ends of the bar-shaped member facing each other are covered by a cover member, which prevents quality degradation of the appearance of the display.
Abstract:
A display apparatus includes a frame case to support four sides of a display panel. The frame case is formed by bending a bar-shaped member made of a metal into a rectangular ring shape. Opposite ends of the bar-shaped member facing each other are covered by a cover member, which prevents quality degradation of the appearance of the display.
Abstract:
A method for transmitting data in a core cache server of a communication system, according to one embodiment of the present invention, comprises the steps of: receiving, from a source base station, a core cache search signal; selecting a relay core cache unit according to the received core cache search signal; and transmitting content data to a target base station through the selected relay core cache unit. A cache server for transmitting and receiving data in a communication system, according to another embodiment of the present invention, comprises: one or more core cache units for storing content data; a receiving unit for receiving, from a source base station, a core cache search signal; a control unit for selecting a relay core cache unit among the one or more core cache units according to the received core cache search signal; and a transmission unit for transmitting the content data to a target base station through the selected relay core cache unit. When the present invention is used, the source base station can continuously provide content to a terminal by transmitting session information and the content to a target base station during a handover of the terminal by using a logical interface between base stations in an LTE system, and in this case, a core cache function is additionally provided such that it is possible to smoothly provide the content to a base station even when moving to a server that does not have a cache function. Thus, backhaul costs caused by a handover are reduced and a user can be provided with improved quality of experience.
Abstract:
A semiconductor device is provided. The semiconductor device includes an active region, a first source/drain region disposed on the active region, a first contact on the first source/drain region, a second source/drain region spaced apart from the first source/drain region and disposed on the active region, a second contact on the second source/drain region and a first gate electrode disposed on the active region. The first gate electrode includes a first ring portion, which surrounds the first contact, but the second contact extends outside the first ring portion.
Abstract:
A semiconductor memory device includes: a substrate including a first region and a second region, the first region includes a peripheral circuit and a first active region (FAR), and the second region includes memory cell blocks. The FAR includes a FAR first extension extending in a first direction, a FAR second extension extending in a second direction, and a FAR third extension extending in a third direction. The FAR first extension, the FAR second extension, and the FAR third extension form an angle greater than 90 degrees relative to one another. The device includes a first pass transistor circuit configured to transmit driving signals, and the first pass transistor circuit includes a FAR first gate structure on the FAR first extension, a FAR second gate structure on the FAR second extension, a FAR third gate structure on the FAR third extension, and a first shared source/drain.
Abstract:
A semiconductor device is provided. The semiconductor device includes a first substrate, an active region defined by an isolation film in the first substrate, an oxide semiconductor layer on the first substrate in the active region, and not comprising silicon, a recess inside the oxide semiconductor layer, and a gate structure filling the recess, comprising a gate electrode and a capping film on the gate electrode, and having an upper surface on a same plane as an upper surface of the active region.
Abstract:
A wall mount including a guide member. The guide member includes a first guide coupling portion positioned in one end portion of the guide member, a second guide coupling portion positioned in another end portion of the guide member, the second guide coupling portion being symmetrical to the first guide coupling portion, a third guide coupling portion positioned between the first guide coupling portion and a center of the guide member, and a fourth guide coupling portion positioned between the second guide coupling portion and the center of the guide member and being symmetrical to the third guide coupling portion; a first fixing bracket coupleable to the first guide coupling portion or the third guide coupling portion; and a second fixing bracket coupleable to the second guide coupling portion or the fourth guide coupling portion.
Abstract:
A display apparatus and method are provided. The display apparatus includes a display including a plurality of independent display elements (IDEs) configured for shape deformation, and a controller configured to determine whether the display is deformed by transmitting a plurality of signals to the plurality of IDEs and receiving signals output from the plurality of IDEs in response to the transmitted signals.
Abstract:
Semiconductor devices have transistors capable of adjusting threshold voltages through a body bias effect. The semiconductor devices include transistors having a front gate on a substrate, a back gate between adjacent transistors, and a carrier storage layer configured to surround the back gate and to trap a carrier. A threshold voltage of a transistor may be changed in response to voltage applied to the back gate. Related fabrication methods are also described.