公开(公告)号：US20200152486A1

公开(公告)日：2020-05-14

申请号：US16420776

申请日：2019-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Hoo KIM ,  Kuntack LEE ,  Yong-Jhin CHO ,  Chawon KOH ,  Sunghyun PARK ,  Hyosan LEE ,  Ji Hoon CHA ,  Soo Young CHOI

IPC: H01L21/67 ,  H01L21/02

Abstract: Disclosed are substrate drying methods, photoresist developing methods, and/or photolithography methods. The substrate drying method including providing a drying liquid on a substrate, increasing a pressure of the drying liquid to produce a supercritical fluid, and removing the supercritical fluid to dry the substrate may be provided.