公开(公告)号：US20150157955A1

公开(公告)日：2015-06-11

申请号：US14537318

申请日：2014-11-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-Jhin CHO ,  Jung-Min OH ,  Yongmyung JUN ,  Yongsun KO ,  Kuntack LEE ,  Hyosan LEE

IPC: B01D3/00

CPC classification number: H01L21/02101 ,  H01L21/02057

Abstract: A method of purifying a cleaning agent is provided. The method includes heating a first mixed solution including an etching agent, a first cleaning agent, and a second cleaning agent at or below a first temperature and distilling the etching agent and the first cleaning agent and removing the second cleaning agent. The method includes condensing or compressing the etching agent and the first cleaning agent forming a second mixed solution including the etching agent and the first cleaning agent. The method includes heating the second mixed solution at a temperature lower than a second temperature, redistilling the etching agent and extracting the first cleaning agent. The second temperature is lower than the first temperature.

Abstract translation: 提供一种净化剂的净化方法。 该方法包括在第一温度或低于第一温度下加热包括蚀刻剂，第一清洁剂和第二清洁剂的第一混合溶液，并蒸馏蚀刻剂和第一清洁剂并除去第二清洁剂。 该方法包括冷凝或压缩蚀刻剂和第一清洗剂，形成包括蚀刻剂和第一清洁剂的第二混合溶液。 该方法包括在低于第二温度的温度下加热第二混合溶液，重新分配蚀刻剂并提取第一清洁剂。 第二个温度低于第一个温度。

公开(公告)号：US20240425988A1

公开(公告)日：2024-12-26

申请号：US18824322

申请日：2024-09-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-Jhin CHO ,  Young Tae KIM

IPC: C23C18/16 ,  H01L21/02 ,  H01L21/67

Abstract: An apparatus for fabricating a semiconductor device includes a chamber accommodating a substrate coated with a first fluid, a lower inlet which is placed in a lower wall of the chamber and providing a first supercritical fluid into the chamber, an upper inlet placed in an upper wall of the chamber and providing a second supercritical fluid into the chamber, a fluid outlet placed in the lower wall of the chamber and discharging a second fluid which is a mixture of the first fluid and the first supercritical fluid to outside of the chamber, and a drain cup placed between the lower wall of the chamber and the substrate, and having a first portion of which a width, in a horizontal direction, decreases toward the lower wall of the chamber, and a second portion which connects the first portion and the fluid outlet to each other.

公开(公告)号：US20220136111A1

公开(公告)日：2022-05-05

申请号：US17515736

申请日：2021-11-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-Jhin CHO ,  Young Tae KIM

IPC: C23C18/16 ,  H01L21/02

Abstract: An apparatus for fabricating a semiconductor device includes a chamber accommodating a substrate coated with a first fluid, a lower inlet which is placed in a lower wall of the chamber and providing a first supercritical fluid into the chamber, an upper inlet placed in an upper wall of the chamber and providing a second supercritical fluid into the chamber, a fluid outlet placed in the lower wall of the chamber and discharging a second fluid which is a mixture of the first fluid and the first supercritical fluid to outside of the chamber, and a drain cup placed between the lower wall of the chamber and the substrate, and having a first portion of which a width, in a horizontal direction, decreases toward the lower wall of the chamber, and a second portion which connects the first portion and the fluid outlet to each other.

公开(公告)号：US20150303036A1

公开(公告)日：2015-10-22

申请号：US14611618

申请日：2015-02-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihoon JEONG ,  Gil Hun SONG ,  Ki Sang EUM ,  Yongsun KO ,  Kuntack LEE ,  Yongmyung JUN ,  Yong-Jhin CHO

IPC: H01J37/32

CPC classification number: H01J37/32513

Abstract: A substrate treatment apparatus includes a seal on at least one of upper or lower chambers of a process chamber. The seal hermetically closes the substrate treatment region, and may be at a location to prevent a gap from forming between the upper and lower chambers. The lower chamber includes an inner wall and an outer wall defining a groove including the seal. The inner wall has a top surface lower than that of the outer wall. The seal has an atypical cross-sectional shape with a recess facing the substrate treatment region.

Abstract translation: 基板处理装置包括在处理室的上室或下室中的至少一个上的密封。 密封件密封地封闭基板处理区域，并且可以在防止在上部室和下部室之间形成间隙的位置。 下室包括限定包括密封件的槽的内壁和外壁。 内壁具有比外壁低的顶面。 密封件具有非对应的横截面形状，其具有面向衬底处理区域的凹部。

公开(公告)号：US20140283886A1

公开(公告)日：2014-09-25

申请号：US14298304

申请日：2014-06-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-Jhin CHO ,  Kun-Tack LEE ,  Hyo-San LEE ,  Young-Hoo KIM ,  Jung-Won LEE ,  Sang-Won BAE ,  Jung-Min HO

IPC: H01L21/67

CPC classification number: H01L21/67023 ,  B08B7/0021 ,  H01L21/0206 ,  H01L21/02104 ,  H01L21/31111 ,  H01L22/00 ,  H01L22/26 ,  H01L27/10852 ,  H01L28/90

Abstract: In a supercritical fluid method a supercritical fluid is supplied into a process chamber. The supercritical fluid is discharged from the process chamber as a supercritical fluid process proceeds. A concentration of a target material included in the supercritical fluid discharged from the process chamber is detected during the supercritical fluid process. An end point of the supercritical fluid process may be determined based on a detected concentration of the target material.

Abstract translation: 在超临界流体法中，将超临界流体供应到处理室中。 当超临界流体处理进行时，超临界流体从处理室排出。 在超临界流体处理中检测从处理室排出的超临界流体中包含的目标材料的浓度。 超临界流体处理的终点可以基于检测到的目标材料的浓度来确定。

公开(公告)号：US20200152486A1

公开(公告)日：2020-05-14

申请号：US16420776

申请日：2019-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Hoo KIM ,  Kuntack LEE ,  Yong-Jhin CHO ,  Chawon KOH ,  Sunghyun PARK ,  Hyosan LEE ,  Ji Hoon CHA ,  Soo Young CHOI

IPC: H01L21/67 ,  H01L21/02

Abstract: Disclosed are substrate drying methods, photoresist developing methods, and/or photolithography methods. The substrate drying method including providing a drying liquid on a substrate, increasing a pressure of the drying liquid to produce a supercritical fluid, and removing the supercritical fluid to dry the substrate may be provided.

公开(公告)号：US20190096712A1

公开(公告)日：2019-03-28

申请号：US15978303

申请日：2018-05-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Jine PARK ,  Byung-Kwon CHO ,  Yong-Jhin CHO ,  Yong-Sun KO ,  Yeon-Jin GIL ,  Kwang-Wook LEE

IPC: H01L21/67 ,  H01L21/302 ,  H01L21/66

CPC classification number: H01L21/67092 ,  H01L21/302 ,  H01L21/6719 ,  H01L21/67253 ,  H01L22/12

Abstract: Disclosed are a supercritical process chamber and an apparatus having the same. The process chamber includes a body frame having a protrusion protruding in an upward vertical direction from a first surface of the body frame and a recess defined by the protrusion and the first surface of the body frame; a cover frame; a buffer chamber arranged between the body frame and the cover frame; and a connector. The buffer chamber includes an inner vessel detachably coupled to the body frame providing a chamber space in the recess and an inner cover detachably coupled to the cover frame. The inner cover is in contact with a first surface of the inner vessel enclosing the chamber space from surroundings. The connector couples the body frame and the cover frame having the buffer chamber arranged therebetween such that the enclosed chamber space is transformed into a process space in which the supercritical process is performed.

公开(公告)号：US20150287590A1

公开(公告)日：2015-10-08

申请号：US14669354

申请日：2015-03-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Min OH ,  Yongsun KO ,  Kwangsu KIM ,  SeokHoon KIM ,  ChangSup MUN ,  Kuntack LEE ,  Hyosan LEE ,  Jihoon JEONG ,  Yong-Jhin CHO

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/02101 ,  H01L21/02057 ,  H01L21/76224 ,  H01L27/10852 ,  H01L27/11582

Abstract: Provided is a method of rinsing and drying a semiconductor device, including forming a pattern on a substrate; rinsing the substrate, where the pattern is formed, using a rinse solution; loading the substrate into a dry chamber; injecting supercritical carbon dioxide into the dry chamber such that rinse solution remaining on the pattern is diluted to have a concentration below 2 percent by weight based on a weight of the rinse solution remaining on the pattern and the supercritical carbon dioxide; and venting the supercritical carbon dioxide such that the dry chamber is maintained at atmospheric pressure to dry the substrate where the pattern is formed.

Abstract translation: 提供了一种冲洗和干燥半导体器件的方法，包括在衬底上形成图案; 使用冲洗溶液冲洗形成图案的基底; 将基板装载到干燥室中; 将超临界二氧化碳注射到干燥室中，使得保留在图案上的冲洗溶液基于残留在图案上的冲洗溶液的重量和超临界二氧化碳被稀释至具有低于2重量％的浓度; 并排出超临界二氧化碳，使得干燥室保持在大气压下，以干燥形成图案的基板。

公开(公告)号：US20140373881A1

公开(公告)日：2014-12-25

申请号：US14207903

申请日：2014-03-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Min OH ,  Kyoungseob KIM ,  Young-Hoo KIM ,  Yongsun KO ,  Kuntack LEE ,  Yongmyung JUN ,  Yong-Jhin CHO

IPC: H01L21/67

CPC classification number: H01L21/67051 ,  H01L21/68728 ,  H01L21/6875

Abstract: A substrate treating apparatus including a support member configured to support a substrate container configured to surround an upper portion of the support member, a nozzle member including at least one nozzle, which is configured to spray a treating solution onto the substrate disposed on the support member, and a treating solution supply unit connected to the nozzle and configured to supply the treating solution to the nozzle through a main tube may be provided.

Abstract translation: 一种基板处理装置，包括：支撑构件，其构造成支撑构造成围绕支撑构件的上部的基板容器;喷嘴构件，包括至少一个喷嘴，其构造成将处理溶液喷射到设置在支撑构件上的基板上; 并且可以设置连接到喷嘴并且被配置为通过主管将处理溶液供应到喷嘴的处理溶液供应单元。

公开(公告)号：US20140360041A1

公开(公告)日：2014-12-11

申请号：US14246274

申请日：2014-04-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihoon JEONG ,  Yongsun KO ,  Kuntack LEE ,  Kyoungseob KIM ,  SeokHoon KIM ,  Jung-Min OH ,  Yongmyung JUN ,  Yong-Jhin CHO

IPC: H01L21/02 ,  F26B25/06

CPC classification number: F26B25/06 ,  H01L21/67017 ,  H01L21/67109

Abstract: A substrate treating apparatus includes a fluid supply unit to supply a fluid to a chamber. The substrate is dried in the chamber using the fluid in a supercritical state. The fluid supply unit includes a storing tank to store the fluid and a conversion tank connected to the storing tank through a connection tube and to the chamber through a supply tube. The conversion tank includes a heater to heat the fluid.

Abstract translation: 基板处理装置包括向腔室供给流体的流体供给单元。 使用处于超临界状态的流体在室中干燥基板。 流体供给单元包括：储存容器，存储流体;以及转换槽，通过连接管连接到储存箱，并通过供给管连接到室。 转换罐包括用于加热流体的加热器。