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公开(公告)号：US20190259641A1
公开(公告)日：2019-08-22
申请号：US16115943
申请日：2018-08-29
发明人： Young-Hoo KIM , Sung Hyun PARK , Hyun Woo NHO , Ji Hoon CHA , Yong Jun CHOI
IPC分类号： H01L21/67 , B01D29/66 , H01L21/311
摘要： A liquid chemical recycle system includes a buffer tank receiving a first liquid chemical from outside; a vacuum tank having a vacuum pump connected thereto and receiving the first liquid chemical from the buffer tank using the vacuum pump; and a recycle tank receiving the first liquid chemical from the vacuum tank and providing a second liquid chemical, which is a recycled first liquid chemical, to the outside, wherein the buffer tank includes a first injection portion, to which the first liquid chemical is provided, and a first supply portion, which provides the first liquid chemical to the vacuum tank, and a bottom of the buffer tank is downwardly inclined toward the first supply portion to prevent a material contained in the first liquid chemical from being accumulated in the buffer tank.
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公开(公告)号：US20200343113A1
公开(公告)日：2020-10-29
申请号：US16690498
申请日：2019-11-21
发明人： Yong Jun CHOI , Seok Hoon KIM , Young-Hoo KIM , In Gi KIM , Sung Hyun PARK , Seung Min SHIN , Kun Tack LEE , Jinwoo LEE , Hun Jae JANG , Ji Hoon CHA
IPC分类号： H01L21/67 , H01L21/687 , B08B3/08
摘要： A multi-chamber apparatus for processing a wafer, the apparatus including a high etch rate chamber to receive the wafer and to etch silicon nitride with a phosphoric acid solution; a rinse chamber to receive the wafer and to clean the wafer with an ammonia mixed solution; and a supercritical drying chamber to dry the wafer with a supercritical fluid.
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公开(公告)号：US20240055428A1
公开(公告)日：2024-02-15
申请号：US18182563
申请日：2023-03-13
发明人： Hyun-Kwan YU , Sunyoung LEE , Hayoung JEON , Hwiseok JUN , Ji Hoon CHA
IPC分类号： H01L27/092 , H01L29/06 , H01L29/08 , H01L29/10 , H01L29/423 , H01L29/775 , H01L21/8238 , H01L29/66
CPC分类号： H01L27/092 , H01L29/0673 , H01L29/0847 , H01L29/1037 , H01L29/42392 , H01L29/775 , H01L21/823807 , H01L21/823814 , H01L29/66439
摘要： A semiconductor device comprises a substrate including NMOSFET and PMOSFET regions, first and second channel patterns on the NMOSFET and PMOSFET regions, respectively, and each including respective semiconductor patterns spaced apart from and vertically stacked on each other, first and second source/drain patterns on the NMOSFET and NMOSFET regions and connected to the first and second channel patterns, respectively, and a gate electrode on the first and second channel patterns. The gate electrode includes a first inner electrode between neighboring semiconductor patterns of the first channel pattern, and a second inner electrode between neighboring semiconductor patterns of the second channel pattern. A top surface of the first inner electrode is more convex than a top surface of the second inner electrode.
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公开(公告)号：US20200152486A1
公开(公告)日：2020-05-14
申请号：US16420776
申请日：2019-05-23
发明人： Young-Hoo KIM , Kuntack LEE , Yong-Jhin CHO , Chawon KOH , Sunghyun PARK , Hyosan LEE , Ji Hoon CHA , Soo Young CHOI
摘要： Disclosed are substrate drying methods, photoresist developing methods, and/or photolithography methods. The substrate drying method including providing a drying liquid on a substrate, increasing a pressure of the drying liquid to produce a supercritical fluid, and removing the supercritical fluid to dry the substrate may be provided.
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公开(公告)号：US20240153792A1
公开(公告)日：2024-05-09
申请号：US18387713
申请日：2023-11-07
发明人： Min Jung KIM , Jin Ah HAN , Hee Hwan KIM , Yong Hoon HONG , Kyoung Suk KIM , Jong Hyeok PARK , Jin Hyung PARK , Dae Hyuk CHUNG , Ji Hoon CHA
IPC分类号： H01L21/67 , H01L21/306
CPC分类号： H01L21/6708 , H01L21/30604
摘要： An apparatus and method for processing a substrate can reduce the concentration of process by-products in a chemical solution. The apparatus includes a substrate rotating device configured to rotate a seated substrate in a spinning manner, a chemical solution supply device configured to supply a chemical solution to the substrate, a chemical solution discharge line configured to discharge the chemical solution having undergone a process to an outside, a chemical solution circulation line configured to circulate the chemical solution having undergone the process to the chemical solution supply device, and a discharged chemical solution selection device configured to discharge a chemical solution containing a first amount of process by-products to the outside through the chemical solution discharge line and to circulate a chemical solution containing a second amount of process by-products through the chemical solution circulation line, wherein the first amount of process by-products is larger than the second amount of process by-products.
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公开(公告)号：US20230253218A1
公开(公告)日：2023-08-10
申请号：US18135618
申请日：2023-04-17
发明人： Ji Hoon CHA , Jinwoo LEE , Seok Hoon KIM , In Gi KIM , Seung Min SHIN , Yong Jun CHOI
IPC分类号： H01L21/67 , H01L21/687
CPC分类号： H01L21/67115 , H01L21/67051 , H01L21/68728 , H01L21/68764
摘要： An apparatus is provided. The apparatus includes a spinner configured to hold a wafer, a nozzle configured to supply a liquid chemical onto an upper surface of the wafer, and a laser module configured to heat the wafer by radiating a laser beam to a lower surface of the wafer while the nozzle supplies the liquid chemical onto the upper surface of the wafer.
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公开(公告)号：US20230343613A1
公开(公告)日：2023-10-26
申请号：US18214096
申请日：2023-06-26
发明人： Yong Jun CHOI , Seok Hoon KIM , Young-Hoo KIM , In Gi KIM , Sung Hyun PARK , Seung Min SHIN , Kun Tack LEE , Jinwoo LEE , Hun Jae JANG , Ji Hoon CHA
IPC分类号： H01L21/67 , B08B3/08 , H01L21/687
CPC分类号： H01L21/67167 , H01L21/67063 , H01L21/67051 , B08B3/08 , H01L21/67034 , H01L21/68707
摘要： A multi-chamber apparatus for processing a wafer, the apparatus including a high etch rate chamber to receive the wafer and to etch silicon nitride with a phosphoric acid solution; a rinse chamber to receive the wafer and to clean the wafer with an ammonia mixed solution; and a supercritical drying chamber to dry the wafer with a supercritical fluid.
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公开(公告)号：US20210060625A1
公开(公告)日：2021-03-04
申请号：US16890490
申请日：2020-06-02
发明人： Seung Min SHIN , Hun Jae JANG , Seok Hoon KIM , Young-Hoo KIM , In Gi KIM , Tae-Hong KIM , Kun Tack LEE , Ji Hoon CHA , Yong Jun CHOI
IPC分类号： B08B7/00 , B08B3/10 , H01L21/67 , H01L21/687 , H01L21/311
摘要： A wafer cleaning apparatus is provided. The wafer cleaning apparatus includes comprising a chamber configured to be loaded with a wafer, a nozzle on the wafer and configured to provide liquid chemicals on an upper surface of the wafer, a housing under the wafer, a laser module configured to irradiate laser on the wafer, a transparent window disposed between the wafer and the laser module, and a controller configured to control on/off of the laser module, wherein the controller is configured to control repetition of turning the laser module on and off, and retain temperature of the wafer within a temperature range, and a ratio of time when the laser module is on in one cycle including on/off of the laser module is 30% to 50%.
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9.发明申请公开(公告)号：US20200251358A1
公开(公告)日：2020-08-06
申请号：US16683753
申请日：2019-11-14
发明人： Ji Hoon CHA , Jinwoo LEE , Seok Hoon KIM , In Gi KIM , Seung Min SHIN , Yong Jun CHOI
IPC分类号： H01L21/67 , H01L21/687
摘要： An apparatus is provided. The apparatus includes a spinner configured to hold a wafer, a nozzle configured to supply a liquid chemical onto an upper surface of the wafer, and a laser module configured to heat the wafer by radiating a laser beam to a lower surface of the wafer while the nozzle supplies the liquid chemical onto the upper surface of the wafer.
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