公开(公告)号：US20150099351A1

公开(公告)日：2015-04-09

申请号：US14046324

申请日：2013-10-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Suk-Hun Choi ,  Chan-Sam Chang

IPC: H01L21/266 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/266

Abstract: A method for fabricating a semiconductor device is provided. An ion implantation mask exposing a portion of a semiconductor substrate is formed on the semiconductor substrate. The implantation mask includes a second hardmask layer having a first thickness and a second hardmask layer having a second thickness. The first hardmask layer is disposed between the second hardmask layer and the semiconductor substrate. An ion implantation process is performed on the exposed portion of the semiconductor substrate using the implantation mask. The implantation mask is removed without forming an etch mask layer on the exposed portion of the semiconductor substrate.

Abstract translation: 提供一种制造半导体器件的方法。 在半导体衬底上形成暴露半导体衬底的一部分的离子注入掩模。 注入掩模包括具有第一厚度的第二硬掩模层和具有第二厚度的第二硬掩模层。 第一硬掩模层设置在第二硬掩模层和半导体衬底之间。 使用注入掩模对半导体衬底的暴露部分进行离子注入工艺。 去除注入掩模，而不在半导体衬底的暴露部分上形成蚀刻掩模层。

公开(公告)号：US08921940B2

公开(公告)日：2014-12-30

申请号：US13839870

申请日：2013-03-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-Bum Kim ,  Suk-Hun Choi

IPC: H01L29/66 ,  H01L27/12 ,  H01L21/76

CPC classification number: H01L21/76 ,  H01L21/76224 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: To fabricate a semiconductor device, a fin is formed to protrude from a substrate. The fin is extended in a first direction. A gate line is formed on the fin and the substrate. The gate line is extended in a second direction crossing the first direction. An amorphous material layer is conformally formed to cover the substrate, the fin, and the gate line. The amorphous material layer is partially removed, thereby forming a first remaining amorphous layer on side walls of the fin and a second remaining amorphous layer on side walls of the gate line. The first remaining amorphous layer and the second remaining amorphous layer are annealed and the first remaining amorphous material layer and the second remaining amorphous material layer are crystallized into a monocrystalline material layer and a polycrystalline material layer, respectively. The polycrystalline material layer is removed.

Abstract translation: 为了制造半导体器件，形成从基板突出的翅片。 翅片沿第一个方向延伸。 在翅片和基板上形成栅极线。 栅极线在与第一方向交叉的第二方向上延伸。 保形地形成无定形材料层以覆盖基板，翅片和栅极线。 部分去除非晶材料层，从而在翅片的侧壁上形成第一剩余非晶层，在栅极线的侧壁上形成第二剩余非晶层。 第一剩余非晶层和第二剩余非晶层退火，并且第一剩余非晶态材料层和第二剩余非晶态材料层分别结晶成单晶材料层和多晶材料层。 去除多晶材料层。

公开(公告)号：US09034742B2

公开(公告)日：2015-05-19

申请号：US14046324

申请日：2013-10-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Suk-Hun Choi ,  Chan-Sam Chang

IPC: H01L21/266 ,  H01L21/308 ,  H01L21/3065

CPC classification number: H01L21/266

Abstract: A method for fabricating a semiconductor device is provided. An ion implantation mask exposing a portion of a semiconductor substrate is formed on the semiconductor substrate. The implantation mask includes a second hardmask layer having a first thickness and a second hardmask layer having a second thickness. The first hardmask layer is disposed between the second hardmask layer and the semiconductor substrate. An ion implantation process is performed on the exposed portion of the semiconductor substrate using the implantation mask. The implantation mask is removed without forming an etch mask layer on the exposed portion of the semiconductor substrate.

Abstract translation: 提供一种制造半导体器件的方法。 在半导体衬底上形成暴露半导体衬底的一部分的离子注入掩模。 注入掩模包含具有第一厚度的第二硬掩模层和具有第二厚度的第二硬掩模层。 第一硬掩模层设置在第二硬掩模层和半导体衬底之间。 使用注入掩模对半导体衬底的暴露部分进行离子注入工艺。 去除注入掩模，而不在半导体衬底的暴露部分上形成蚀刻掩模层。

公开(公告)号：US20140264597A1

公开(公告)日：2014-09-18

申请号：US13839870

申请日：2013-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin-Bum KIM ,  Suk-Hun Choi

IPC: H01L27/12 ,  H01L21/76

CPC classification number: H01L21/76 ,  H01L21/76224 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: To fabricate a semiconductor device, a fin is formed to protrude from a substrate. The fin is extended in a first direction. A gate line is formed on the fin and the substrate. The gate line is extended in a second direction crossing the first direction. An amorphous material layer is conformally formed to cover the substrate, the fin, and the gate line. The amorphous material layer is partially removed, thereby forming a first remaining amorphous layer on side walls of the fin and a second remaining amorphous layer on side walls of the gate line. The first remaining amorphous layer and the second remaining amorphous layer are annealed and the first remaining amorphous material layer and the second remaining amorphous material layer are crystallized into a monocrystalline material layer and a polycrystalline material layer, respectively. The polycrystalline material layer is removed.

Abstract translation: 为了制造半导体器件，形成从基板突出的翅片。 翅片沿第一个方向延伸。 在翅片和基板上形成栅极线。 栅极线在与第一方向交叉的第二方向上延伸。 保形地形成无定形材料层以覆盖基板，翅片和栅极线。 部分去除非晶材料层，从而在翅片的侧壁上形成第一剩余非晶层，在栅极线的侧壁上形成第二剩余非晶层。 第一剩余非晶层和第二剩余非晶层退火，并且第一剩余非晶态材料层和第二剩余非晶态材料层分别结晶成单晶材料层和多晶材料层。 去除多晶材料层。