公开(公告)号：US20250089583A1

公开(公告)日：2025-03-13

申请号：US18753280

申请日：2024-06-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuna GIL ,  Sumin YU

IPC: H10N70/00 ,  H10B63/00

Abstract: A semiconductor device includes a word line extending in a first direction. A bit line extends on the word line in a second direction intersecting the first direction. A memory cell is disposed between the word line and the bit line. The memory cell includes a lower electrode, a selection element, and an upper electrode sequentially disposed on the word line. A filling pattern is on a side surface of the memory cell. An etch stop pattern includes an insulating material between the filling pattern and the bit line. A lower surface of the etch stop pattern is positioned at a higher level than a level of a lower surface of the upper electrode.

公开(公告)号：US20230395661A1

公开(公告)日：2023-12-07

申请号：US18149957

申请日：2023-01-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sumin YU ,  Jungtaek KIM ,  Moonseung YANG ,  Seojin JEONG ,  Edward CHO ,  Seokhoon KIM ,  Pankwi PARK

IPC: H01L29/08 ,  H01L27/092 ,  H01L29/06 ,  H01L29/161 ,  H01L29/423 ,  H01L29/775 ,  H01L21/8238 ,  H01L29/66

CPC classification number: H01L29/0847 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/161 ,  H01L29/66439 ,  H01L29/775 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/66545 ,  H01L29/42392

Abstract: An integrated circuit (IC) device including fin-type active regions parallel to each other on a substrate, the fin-type active regions extending in a first lateral direction, a first nanosheet stack apart from a fin top surface of a first fin-type active region selected from the fin-type active regions, the first nanosheet stack including at least one nanosheet facing the fin top surface of the first fin-type active region, a gate structure surrounding the first nanosheet stack, the gate structure extending in a second lateral direction, a first source/drain region in contact with one sidewall of the first nanosheet stack, and a second source/drain region in contact with another sidewall of the first nanosheet stack , wherein a greatest width of the first source/drain region is less than a greatest width of the second source/drain region in the second lateral direction may be provided.