公开(公告)号：US20230163076A1

公开(公告)日：2023-05-25

申请号：US17885025

申请日：2022-08-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun Ki PARK ,  Yoon Tae Hwang ,  Wan Don Kim ,  Sung Hwan Kim ,  Tae Yeol Kim

IPC: H01L23/535 ,  H01L23/528 ,  H01L21/768

CPC classification number: H01L23/535 ,  H01L23/5283 ,  H01L21/76804 ,  H01L21/76805 ,  H01L21/76895

Abstract: A semiconductor device includes a gate structure including a gate electrode on a substrate. A source/drain pattern is on the substrate and positioned on a side surface of the gate electrode. A source/drain contact is on the source/drain pattern. A first conductive pad is on the source/drain contact. A second conductive pad is on the gate structure. A via plug penetrates the first conductive pad and is connected to the source/drain contact. A gate contact penetrates the second conductive pad and is connected to the gate electrode. A portion of the via plug protrudes from the first conductive pad. A portion of the gate contact protrudes from the second conductive pad. A height from an upper surface of the gate structure to an upper surface of the via plug is equal to a height from the upper surface of the gate structure to an upper surface of the gate contact.

公开(公告)号：US20240136416A1

公开(公告)日：2024-04-25

申请号：US18234596

申请日：2023-08-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun Ki Park ,  Sung Hwan Kim ,  Wan Don Kim ,  Heung Seok Ryu

IPC: H01L29/417 ,  H01L21/285 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423 ,  H01L29/45 ,  H01L29/66 ,  H01L29/775

CPC classification number: H01L29/41733 ,  H01L21/28518 ,  H01L29/0673 ,  H01L29/401 ,  H01L29/42392 ,  H01L29/45 ,  H01L29/66439 ,  H01L29/775

Abstract: A semiconductor device includes an active pattern extending in a first direction, a plurality of gate structures on the active pattern spaced in the first direction, and including a gate electrode extending in a second direction, a source/drain pattern between adjacent gate structures, a silicide mask pattern on the source/drain pattern, an upper surface of the silicide mask pattern being lower than an upper surface of the gate electrode, a source/drain contact on the source/drain pattern connected to the source/drain pattern, and a contact silicide film between the source/drain contact and the source/drain pattern in contact with a bottom surface of the silicide mask pattern, wherein a height from a lowermost part of the source/drain pattern to a lowermost part of the source/drain contact is smaller than a height from the lowermost part of the source/drain pattern to the bottom surface of the silicide mask pattern.

公开(公告)号：US11626405B2

公开(公告)日：2023-04-11

申请号：US17201121

申请日：2021-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hwan Kim ,  Ji Young Kim ,  Bong Soo Kim

IPC: H01L27/08 ,  H01L27/02 ,  H01L27/108 ,  H01L49/02

Abstract: A semiconductor device includes a plurality of lower electrode structures disposed on a substrate, and a supporter pattern disposed between pairs of lower electrode structures of the plurality of lower electrode structures. The semiconductor device further includes a capacitor dielectric layer disposed on surfaces of each of the plurality of lower electrode structures and the supporter pattern, and an upper electrode disposed on the capacitor dielectric layer. The plurality of lower electrode structures includes a first lower electrode and a second lower electrode disposed on the first lower electrode and having a cylindrical shape. The first lower electrode has a pillar shape. The first lower electrode includes an insulating core. The insulating core is disposed in the first lower electrode. An outer side surface of the first lower electrode and an outer side surface of the second lower electrode are coplanar.

公开(公告)号：US10971496B2

公开(公告)日：2021-04-06

申请号：US16409046

申请日：2019-05-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hwan Kim ,  Ji Young Kim ,  Bong Soo Kim

IPC: H01L27/08 ,  H01L27/02 ,  H01L27/108 ,  H01L49/02

Abstract: A semiconductor device includes a plurality of lower electrode structures disposed on a substrate, and a supporter pattern disposed between pairs of lower electrode structures of the plurality of lower electrode structures. The semiconductor device further includes a capacitor dielectric layer disposed on surfaces of each of the plurality of lower electrode structures and the supporter pattern, and an upper electrode disposed on the capacitor dielectric layer. The plurality of lower electrode structures includes a first lower electrode and a second lower electrode disposed on the first lower electrode and having a cylindrical shape. The first lower electrode has a pillar shape. The first lower electrode includes an insulating core. The insulating core is disposed in the first lower electrode. An outer side surface of the first lower electrode and an outer side surface of the second lower electrode are coplanar.

公开(公告)号：US09354385B2

公开(公告)日：2016-05-31

申请号：US14060896

申请日：2013-10-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun Seok An ,  Chan Hong Park ,  Young Chol Lee ,  Byoung Jin Cho ,  Sung Hwan Kim ,  Jee Su Park

IPC: F21V8/00 ,  G02F1/1335 ,  G02F1/1333

CPC classification number: G02B6/0096 ,  G02B6/0036 ,  G02B6/0055 ,  G02F1/133305 ,  G02F1/133615

Abstract: A curved display apparatus includes a curved display panel, a curved bottom sash disposed at a rear of the display panel such that the curved bottom sash is spaced apart from the display panel, and a plurality of backlight units disposed at opposite inner sides of the bottom sash to irradiate light to the bottom sash. The inside of the bottom sash reflects the light irradiated from the backlight units to the display panel. Consequently, a light guide plate may be omitted from the display apparatus.

Abstract translation: 弯曲显示装置包括弯曲显示面板，设置在显示面板后部的弯曲底部窗框，使得弯曲的底部窗框与显示面板间隔开，并且设置在底部的相对内侧的多个背光单元 窗扇将光照射到底部的窗扇上。 底部窗框的内部将从背光单元照射的光反射到显示面板。 因此，可以从显示装置中省略导光板。

公开(公告)号：US09353471B2

公开(公告)日：2016-05-31

申请号：US13646055

申请日：2012-10-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min Jea Choi ,  Sung Hwan Kim

IPC: D06F37/22

CPC classification number: D06F37/225

Abstract: A washing machine with a balancer that may be commonly used irrespective of the size of a drum. The washing machine includes a cabinet, a drum rotatably disposed in the cabinet, an annular recess provided at the drum, and a balancer assembly mounted to the recess. The balancer assembly includes a balancer to offset unbalanced load generated in the drum during rotation of the drum and at least one balancer guide coupled to an outer circumference of the balancer to constitute the balancer assembly, the balancer guide being mounted to the recess along with the balancer so that an outer diameter of the balancer assembly corresponds to the recess.

Abstract translation: 具有平衡器的洗衣机可以是通常使用的，而与鼓的尺寸无关。 洗衣机包括机壳，可旋转地设置在机壳中的滚筒，设置在滚筒处的环形凹部和安装到凹部的平衡器组件。 平衡器组件包括平衡器，用于抵消在滚筒旋转期间在滚筒中产生的不平衡载荷，以及耦合到平衡器的外圆周的至少一个平衡器引导件，以构成平衡器组件，平衡器引导件与 平衡器，使得平衡器组件的外径对应于凹部。

公开(公告)号：US20240234525A9

公开(公告)日：2024-07-11

申请号：US18234596

申请日：2023-08-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun Ki Park ,  Sung Hwan Kim ,  Wan Don Kim ,  Heung Seok Ryu

IPC: H01L29/417 ,  H01L21/285 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423 ,  H01L29/45 ,  H01L29/66 ,  H01L29/775

CPC classification number: H01L29/41733 ,  H01L21/28518 ,  H01L29/0673 ,  H01L29/401 ,  H01L29/42392 ,  H01L29/45 ,  H01L29/66439 ,  H01L29/775

Abstract: A semiconductor device includes an active pattern extending in a first direction, a plurality of gate structures on the active pattern spaced in the first direction, and including a gate electrode extending in a second direction, a source/drain pattern between adjacent gate structures, a silicide mask pattern on the source/drain pattern, an upper surface of the silicide mask pattern being lower than an upper surface of the gate electrode, a source/drain contact on the source/drain pattern connected to the source/drain pattern, and a contact silicide film between the source/drain contact and the source/drain pattern in contact with a bottom surface of the silicide mask pattern, wherein a height from a lowermost part of the source/drain pattern to a lowermost part of the source/drain contact is smaller than a height from the lowermost part of the source/drain pattern to the bottom surface of the silicide mask pattern.

公开(公告)号：US20130081432A1

公开(公告)日：2013-04-04

申请号：US13631101

申请日：2012-09-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Jea Choi ,  Hee Beom Park ,  Sung Hwan Kim ,  Sang Oh Yoo ,  Hyung Woo Lee ,  Doo Young Ryu

IPC: D06F37/02 ,  D06F21/04

CPC classification number: D06F37/06 ,  D06F37/14

Abstract: A lifter simply mounted on a drum and a washing machine having the same. The washing machine includes a cabinet, a tub arranged within the cabinet, a drum arranged within the tub to accommodate laundry and rotated by rotary force transmitted from a driving source, and a plurality of lifters provided on the inner circumferential surface of the drum to move the laundry within the drum. Each of the plurality of lifters includes a plurality of hooks provided along a frame formed at the lower end of each of the plurality of lifters so as to allow each of the plurality of lifters to be hung to the drum, and at least one protrusion protruding from the lower end of each of the plurality of lifters so as to allow each of the plurality of lifters to be fixed to the inner circumferential surface of the drum.

Abstract translation: 升降机简单地安装在滚筒和具有该升降机的洗衣机上。 洗衣机包括机壳，设置在机壳内的桶，设置在桶内以容纳衣物并通过从驱动源传递的旋转力旋转的滚筒，以及设置在滚筒的内周面上的多个提升器，以移动 滚筒内的衣物。 所述多个升降机中的每一个包括沿着形成在所述多个升降器中的每一个的所述下端处的框架设置的多个钩，以便允许所述多个提升器中的每一个悬挂在所述滚筒上，并且至少一个突出部突出 从所述多个升降器的每一个的下端开始，以便使所述多个提升器中的每一个固定到所述滚筒的内周表面。