SEMICONDUCTOR WAFER PROCESSING DEVICE

    公开(公告)号:US20220392781A1

    公开(公告)日:2022-12-08

    申请号:US17745254

    申请日:2022-05-16

    Abstract: There is provided a semiconductor device capable of improving the performance and reliability of a device. The semiconductor wafer processing device comprising a chamber, and, a showerhead configured to supply a gas into the chamber, wherein the showerhead includes, a plate, a plurality of first spray hole groups in a first row from a center of the plate, and a second spray hole group in a second row outside the first row, wherein each of the first spray hole groups includes a plurality of first spray holes, and when L is an average value of distances from the center of the plate to each spray hole of each of the first spray hole groups, the number of first spray holes where a distance from the center of the plate is smaller than L is more than the number of first spray holes where the distance from the center of the plate is greater than L.

    VERTICAL MEMORY DEVICE
    2.
    发明申请

    公开(公告)号:US20180374961A1

    公开(公告)日:2018-12-27

    申请号:US15849094

    申请日:2017-12-20

    Abstract: A vertical memory device and a method of manufacturing such device are provided. The vertical memory device may include a plurality of gate electrode layers stacked in a cell region of a semiconductor substrate; a plurality of upper isolation insulating layers dividing an uppermost gate electrode layer among the plurality of gate electrode layers, extending in a first direction; a plurality of vertical holes arranged to have any two adjacent vertical holes to have a uniform distance from each other throughout the cell region and including a plurality of channel holes penetrating through the plurality of gate electrode layers disposed between the plurality of upper isolation insulating layers and a plurality of first support holes penetrating through the plurality of upper insulating layers; a plurality of channel structures disposed in the plurality of channel holes; and a plurality of first support structures disposed in the plurality of first support holes.

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