公开(公告)号：US20240304484A1

公开(公告)日：2024-09-12

申请号：US18525803

申请日：2023-11-30

Applicant: SAMSUNG ELECTRONICS CO. LTD.

Inventor： Hyeon Uk KIM ,  Kyoung Soo KIM ,  Kun Jin RYU ,  Gyeong Dam BAEK ,  Seung Hyuk BAEK ,  Dong Chan SEO ,  Hu Jong LEE ,  Jae Hyuk CHA ,  Ji Won YOON ,  Sun Oh KIM ,  Kyeong Jun MIN ,  Ji Wook KWON ,  Seung Seok HA ,  Gil Do KIM

IPC: H01L21/677 ,  H01L21/67

CPC classification number: H01L21/6773 ,  H01L21/67259 ,  B25J11/0095

Abstract: A stocker system including a stocker apparatus, a transfer robot including a sensing module and a robot arm, a manual port of the stocker apparatus, and a controller in communication with the transfer robot, wherein the controller communicates with the sensing module to determine that a container is transferrable by the robot arm between the manual port of the stocker apparatus and the transfer robot.

公开(公告)号：US20240120393A1

公开(公告)日：2024-04-11

申请号：US18334849

申请日：2023-06-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jisoo PARK ,  Myung Il KANG ,  Ji Wook KWON ,  Jung Han LEE ,  Subin CHOI

IPC: H01L29/417 ,  H01L23/48 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/41733 ,  H01L23/481 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696

Abstract: A semiconductor device includes a substrate, a first sheet pattern on the substrate, a gate electrode on the substrate and surrounding the first sheet pattern, a first source/drain pattern and a second source/drain pattern respectively connected to a first end and a second end of the first sheet pattern, a contact blocking pattern on a lower side of the second source/drain pattern, a first source/drain contact extending in a first direction and connected to the first source/drain pattern, and a second source/drain contact connected to the second source/drain pattern and extending in the first direction to contact an upper surface of the contact blocking pattern. A depth from an upper surface of the gate electrode to a lowermost portion of the first source/drain contact may be greater than a depth from the upper surface of the gate electrode to the upper surface of the contact blocking pattern.

公开(公告)号：US20190355719A1

公开(公告)日：2019-11-21

申请号：US16372166

申请日：2019-04-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shigenobu MAEDA ,  Sung Chul PARK ,  Chul Hong PARK ,  Yoshinao HARADA ,  Sung Min KANG ,  Ji Wook KWON ,  Ha-Young KIM ,  Yuichi HIRANO

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/40

Abstract: A semiconductor device includes first to fourth cells sequentially disposed on a substrate, first to third diffusion break structures, a first fin structure configured to protrude from the substrate, the first fin structure comprising first to fourth fins separated from each other by the first to third diffusion break structures, a second fin structure configured to protrude from the substrate, to be spaced apart from the first fin structure, the second fin structure comprising fifth to eighth fins separated from each other by the first to third diffusion break structures, the first to fourth gate electrodes being disposed in the first to fourth cells, respectively, and the number of fins in one cell of the first to fourth cells is different from the number of fins in an other cell of the first to fourth cells.