公开(公告)号：US20150235836A1

公开(公告)日：2015-08-20

申请号：US14625388

申请日：2015-02-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Yong GO ,  Jin-Gyun KIM ,  Dong-Kyum KIM ,  Jung-Ho KIM ,  Koong-Hyun NAM ,  Sung-Hae LEE ,  Eun-Young LEE ,  Jung-Geun JEE ,  Eun-Yeoung CHOI ,  Ki-Hyun HWANG

IPC: H01L21/02 ,  H01L21/687

CPC classification number: H01L21/0228 ,  C23C16/01 ,  C23C16/40 ,  C23C16/45525 ,  H01L21/02164 ,  H01L21/02172 ,  H01L21/02175 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/68771 ,  H01L27/11582

Abstract: In a method of forming an oxide layer of a semiconductor process, a preliminary precursor flow is provided on a substrate in a deposition chamber to form a preliminary precursor layer, a precursor flow and a first oxidizing agent flow are provided on the preliminary precursor layer alternately and repeatedly to form precursor layers and first oxidizing agent layers alternately stacked on the preliminary precursor layer, and a second oxidizing agent flow is provided on the precursor layer or the first oxidizing agent layer alternately stacked to form a second oxidizing agent layer.

Abstract translation: 在形成半导体工艺的氧化物层的方法中，在沉积室中的衬底上提供预备前驱体流以形成预备前体层，在预备前体层上交替地设置前体流和第一氧化剂流 并重复地形成交替堆叠在预备前驱体层上的前体层和第一氧化剂层，并且在前体层或第一氧化剂层上交替堆叠形成第二氧化剂层的第二氧化剂流。