公开(公告)号：US20200216953A1

公开(公告)日：2020-07-09

申请号：US16522372

申请日：2019-07-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Yub IE ,  Guk-Hyon YON ,  Jung-Geun JEE

IPC: C23C16/455 ,  H01L21/02 ,  C23C16/24 ,  C23C16/52 ,  C23C16/48

Abstract: An ALD apparatus includes a first process chamber configured to supply a first source gas and induce adsorption of a first material film. A second process chamber is configured to supply a second source gas and induce adsorption of a second material film. A third process chamber is configured to supply a third source gas and induce absorption of a third material film. A surface treatment chamber is configured to perform a surface treatment process on each of the first to third material films and remove a reaction by-product. A heat treatment chamber is configured to perform a heat treatment process on the substrate on which the first to third material films are adsorbed in a predetermined order and transform the first to third material films into a single compound thin film.

公开(公告)号：US20190080033A1

公开(公告)日：2019-03-14

申请号：US15996484

申请日：2018-06-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Yub IE ,  Jung-Geun JEE ,  Jae-Myung CHOE

IPC: G06F17/50

Abstract: A computing system includes memory configured to store instructions and a nozzle library, and a processor configured to access the memory and to execute the instructions. The instructions cause the computing system to select at least one nozzle unit as a selected at least one nozzle unit based on the nozzle library and to place the selected at least one nozzle unit at corresponding location coordinates, to create multiple volume meshes for the process chamber, and to simulate the flow of the gas through the selected at least one nozzle unit in the process chamber based on the multiple volume meshes in the process chamber. The nozzle library includes information about multiple nozzle units of which each has multiple volume meshes formed therein. The nozzle units have different shapes from each other.

公开(公告)号：US20160260726A1

公开(公告)日：2016-09-08

申请号：US15047840

申请日：2016-02-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-Jin SHIN ,  Kyung-Hyun KIM ,  Jung-Hun NO ,  Choong-Kee SEONG ,  Seung-Pil CHUNG ,  Jung-Geun JEE

IPC: H01L27/115 ,  H01L21/8234

CPC classification number: H01L27/11521 ,  H01L21/28273 ,  H01L21/762 ,  H01L21/76289 ,  H01L21/764 ,  H01L21/823462 ,  H01L21/823481 ,  H01L29/66825

Abstract: A preliminary tunnel insulation pattern and a preliminary charge storage pattern are formed on each active pattern extending in a direction, and a trench is defined between structures including the active pattern, the preliminary tunnel insulation pattern and the preliminary charge storage pattern. A preliminary isolation pattern partially fills the trench. A dielectric layer and a control gate electrode layer are formed on the preliminary charge storage pattern and the preliminary isolation pattern. The control gate electrode layer, the dielectric layer, the preliminary charge storage pattern and the preliminary tunnel insulation pattern are patterned to form gate structures including a tunnel insulation pattern, a charge storage pattern, a dielectric layer pattern and a control gate electrode. The preliminary isolation pattern is isotropically etched to form an isolation pattern and a first air gap. An insulating interlayer is formed between the gate structures to keep the first air gap.

Abstract translation: 在沿着一个方向延伸的每个有源图案上形成初始隧道绝缘图案和初步电荷存储图案，并且在包括有源图案，预备隧道绝缘图案和预备电荷存储图案的结构之间限定沟槽。 初步隔离图案部分地填充沟槽。 在初步电荷存储图案和初步隔离图案上形成电介质层和控制栅极电极层。 对控制栅极电极层，电介质层，预备电荷存储图案和预备隧道绝缘图案进行图案化以形成包括隧道绝缘图案，电荷存储图案，电介质层图案和控制栅电极的栅极结构。 预先隔离图案被各向同性地蚀刻以形成隔离图案和第一气隙。 在栅极结构之间形成绝缘中间层以保持第一气隙。

公开(公告)号：US20150235836A1

公开(公告)日：2015-08-20

申请号：US14625388

申请日：2015-02-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Yong GO ,  Jin-Gyun KIM ,  Dong-Kyum KIM ,  Jung-Ho KIM ,  Koong-Hyun NAM ,  Sung-Hae LEE ,  Eun-Young LEE ,  Jung-Geun JEE ,  Eun-Yeoung CHOI ,  Ki-Hyun HWANG

IPC: H01L21/02 ,  H01L21/687

CPC classification number: H01L21/0228 ,  C23C16/01 ,  C23C16/40 ,  C23C16/45525 ,  H01L21/02164 ,  H01L21/02172 ,  H01L21/02175 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/68771 ,  H01L27/11582

Abstract: In a method of forming an oxide layer of a semiconductor process, a preliminary precursor flow is provided on a substrate in a deposition chamber to form a preliminary precursor layer, a precursor flow and a first oxidizing agent flow are provided on the preliminary precursor layer alternately and repeatedly to form precursor layers and first oxidizing agent layers alternately stacked on the preliminary precursor layer, and a second oxidizing agent flow is provided on the precursor layer or the first oxidizing agent layer alternately stacked to form a second oxidizing agent layer.

Abstract translation: 在形成半导体工艺的氧化物层的方法中，在沉积室中的衬底上提供预备前驱体流以形成预备前体层，在预备前体层上交替地设置前体流和第一氧化剂流 并重复地形成交替堆叠在预备前驱体层上的前体层和第一氧化剂层，并且在前体层或第一氧化剂层上交替堆叠形成第二氧化剂层的第二氧化剂流。