公开(公告)号：US20190164989A1

公开(公告)日：2019-05-30

申请号：US16122037

申请日：2018-09-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Yun LEE ,  Jae-Hoon JANG ,  Jae-Duk LEE ,  Joon-Hee LEE ,  Young-Jin JUNG

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L21/308 ,  H01L21/768

CPC classification number: H01L27/11582 ,  H01L21/308 ,  H01L21/76837 ,  H01L27/11556 ,  H01L27/11565 ,  H01L29/40117

Abstract: A vertical type semiconductor device includes insulation patterns on a substrate and spaced apart from each other in a first direction perpendicular to a top surface of the substrate, a channel structure on the substrate and penetrating through the insulation patterns, a first conductive pattern partially filling a gap between the insulation patterns adjacent to each other in the first direction and the channel structure and having a slit in a surface thereof, the slit extending in a direction parallel with the top surface of the substrate, and a second conductive pattern on the first conductive pattern in the gap and filling the slit.

公开(公告)号：US20200381453A1

公开(公告)日：2020-12-03

申请号：US16995084

申请日：2020-08-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Yun LEE ,  Jae-Hoon JANG ,  Jae-Duk LEE ,  Joon-Hee LEE ,  Young-Jin JUNG

IPC: H01L27/11582 ,  H01L21/768 ,  H01L21/308 ,  H01L27/11556 ,  H01L21/28

Abstract: A vertical type semiconductor device includes insulation patterns on a substrate and spaced apart from each other in a first direction perpendicular to a top surface of the substrate, a channel structure on the substrate and penetrating through the insulation patterns, a first conductive pattern partially filling a gap between the insulation patterns adjacent to each other in the first direction and the channel structure and having a slit in a surface thereof, the slit extending in a direction parallel with the top surface of the substrate, and a second conductive pattern on the first conductive pattern in the gap and filling the slit.