公开(公告)号：US11569065B2

公开(公告)日：2023-01-31

申请号：US16448450

申请日：2019-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-gil Kang ,  Min-seop Park ,  Gon-jun Kim ,  Jae-jik Baek ,  Jae-jin Shin ,  In-hye Jeong

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/02

Abstract: A substrate processing apparatus includes a processing chamber; a susceptor provided in the processing chamber, wherein the susceptor is configured to support a substrate; a first plasma generator disposed on one side of the processing chamber; and a second plasma generator disposed on another side of the processing chamber, wherein the second plasma generator is configured to generate plasma by simultaneously supplying a sinusoidal wave signal and a non-sinusoidal wave signal to the susceptor. By using a substrate processing apparatus, a signal source device, and a method of processing a material layer according to the inventive concept, a smooth etched surface may be obtained for a crystalline material layer without a risk of device damage by RDC.