公开(公告)号：US09966274B2

公开(公告)日：2018-05-08

申请号：US15598016

申请日：2017-05-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gon-jun Kim ,  Sam Hyungsam Kim ,  Sangheon Lee

IPC: H01L21/311 ,  H01J37/32 ,  C23C16/455 ,  H01L21/3065

CPC classification number: H01L21/31116 ,  C23C16/45565 ,  C23C16/45591 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/3065

Abstract: Provided are a method of generating plasma and a method of fabricating a semiconductor device including the method, which may improve selectivity in an etching process and minimize damage to layers. The method of generating plasma includes generating first plasma by supplying at least one first process gas into a first remote plasma source (RPS) and applying first energy having a first power at a first duty ratio, and generating second plasma by supplying at least one second process gas into a second RPS and applying second energy having a second power at a second duty ratio.

公开(公告)号：US11569065B2

公开(公告)日：2023-01-31

申请号：US16448450

申请日：2019-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-gil Kang ,  Min-seop Park ,  Gon-jun Kim ,  Jae-jik Baek ,  Jae-jin Shin ,  In-hye Jeong

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/02

Abstract: A substrate processing apparatus includes a processing chamber; a susceptor provided in the processing chamber, wherein the susceptor is configured to support a substrate; a first plasma generator disposed on one side of the processing chamber; and a second plasma generator disposed on another side of the processing chamber, wherein the second plasma generator is configured to generate plasma by simultaneously supplying a sinusoidal wave signal and a non-sinusoidal wave signal to the susceptor. By using a substrate processing apparatus, a signal source device, and a method of processing a material layer according to the inventive concept, a smooth etched surface may be obtained for a crystalline material layer without a risk of device damage by RDC.

公开(公告)号：US10418250B2

公开(公告)日：2019-09-17

申请号：US15870227

申请日：2018-01-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gon-jun Kim ,  Yuri Barsukov ,  Vladimir Volynets ,  Dali Liu ,  Sang-jin An ,  Beom-jin Yoo ,  Sang-heon Lee ,  Shamik Patel

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/02

Abstract: An etching method using a remote plasma source (RPS) and a method of fabricating a semiconductor device, the etching method including generating a plasma by supplying a process gas to at least one RPS and applying power to the at least one RPS; and etching a first material film including SiNx by supplying the plasma and at least one control gas selected from HBr, HCl, HI, NH3, SiH4, CHF3, and CH2F2 to a process chamber.

公开(公告)号：US09865474B2

公开(公告)日：2018-01-09

申请号：US15347331

申请日：2016-11-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gon-jun Kim ,  Vladimir Volynets ,  Sang-jin An ,  Hee-jeon Yang ,  Sangheon Lee ,  Sung-keun Cho ,  Xinglong Chen ,  In-ho Choi

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/311 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/32357 ,  H01L21/02046 ,  H01L21/3065

Abstract: An etching method using plasma includes generating plasma by supplying process gases to at least one remote plasma source (RPS) and applying power to the at least one RPS, and etching an etching object by supplying water (H2O) and the plasma to a process chamber.

公开(公告)号：US20170256415A1

公开(公告)日：2017-09-07

申请号：US15598016

申请日：2017-05-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gon-jun Kim ,  Sam Hyungsam Kim ,  Sangheon Lee

IPC: H01L21/311 ,  H01J37/32

CPC classification number: H01L21/31116 ,  C23C16/45565 ,  C23C16/45591 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/3065

Abstract: Provided are a method of generating plasma and a method of fabricating a semiconductor device including the method, which may improve selectivity in an etching process and minimize damage to layers. The method of generating plasma includes generating first plasma by supplying at least one first process gas into a first remote plasma source (RPS) and applying first energy having a first power at a first duty ratio, and generating second plasma by supplying at least one second process gas into a second RPS and applying second energy having a second power at a second duty ratio.