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公开(公告)号：US10424503B2
公开(公告)日：2019-09-24
申请号：US15885067
申请日：2018-01-31
发明人： Young-sang Youn , Myung-geun Song , Ji-hoon Cha , Jae-jik Baek , Bo-un Yoon , Jeong-nam Han
IPC分类号： H01L21/762 , H01L21/8234 , H01L29/06 , H01L27/088 , H01L21/84 , H01L21/265 , H01L21/763
摘要： A method of manufacturing a semiconductor device includes forming a plurality of fins by forming a plurality of first device isolating trenches repeated at a first pitch in a substrate, forming a plurality of fin-type active areas protruding from a top surface of a first device isolating layer by forming the first device isolating layer in the plurality of first device isolating trenches, forming a plurality of second device isolating trenches at a pitch different from the first pitch by etching a portion of the substrate and the first device isolating layer, and forming a second device isolating layer in the plurality of second device isolating trenches, so as to form a plurality of fin-type active area groups separated from each other with the second device isolating layer therebetween.
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公开(公告)号：US10438891B2
公开(公告)日：2019-10-08
申请号：US15697881
申请日：2017-09-07
发明人： Sang-jine Park , Kee-sang Kwon , Jae-jik Baek , Yong-sun Ko , Kwang-wook Lee
IPC分类号： H01L23/532 , H01L23/522 , H01L29/78 , H01L21/768 , H01L21/285 , H01L21/8234 , H01L29/417
摘要： An integrated circuit device includes an insulating film on a substrate, a lower wiring layer penetrating at least a portion of the insulating film, the lower wiring layer including a first metal, a lower conductive barrier film surrounding a bottom surface and a sidewall of the lower wiring layer, the lower conductive barrier film including a second metal different from the first metal, a first metal silicide capping layer covering a top surface of the lower wiring layer, the first metal silicide capping layer including the first metal, and a second metal silicide capping layer contacting the first metal silicide capping layer and disposed on the lower conductive barrier film, the second metal silicide capping layer including the second metal.
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公开(公告)号：US11569065B2
公开(公告)日：2023-01-31
申请号：US16448450
申请日：2019-06-21
发明人： Sung-gil Kang , Min-seop Park , Gon-jun Kim , Jae-jik Baek , Jae-jin Shin , In-hye Jeong
IPC分类号： H01J37/32 , H01L21/67 , H01L21/3213 , H01L21/311 , H01L21/02
摘要： A substrate processing apparatus includes a processing chamber; a susceptor provided in the processing chamber, wherein the susceptor is configured to support a substrate; a first plasma generator disposed on one side of the processing chamber; and a second plasma generator disposed on another side of the processing chamber, wherein the second plasma generator is configured to generate plasma by simultaneously supplying a sinusoidal wave signal and a non-sinusoidal wave signal to the susceptor. By using a substrate processing apparatus, a signal source device, and a method of processing a material layer according to the inventive concept, a smooth etched surface may be obtained for a crystalline material layer without a risk of device damage by RDC.
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4.发明授权Methods of fabricating semiconductor devices including fin-shaped active regions 有权制造半导体器件的方法包括鳍状有源区公开(公告)号：US09305825B2
公开(公告)日：2016-04-05
申请号：US14175212
申请日：2014-02-07
发明人： Young-sang Youn , Myung-geun Song , Ji-hoon Cha , Jae-jik Baek , Bo-un Yoon , Jeong-nam Han
IPC分类号： H01L21/76 , H01L21/762 , H01L21/8234 , H01L21/84
CPC分类号： H01L21/76229 , H01L21/2652 , H01L21/763 , H01L21/823431 , H01L21/823481 , H01L21/845 , H01L27/0886 , H01L29/0649 , H01L29/0657
摘要： A method of manufacturing a semiconductor device includes forming a plurality of fins by forming a plurality of first device isolating trenches repeated at a first pitch in a substrate, forming a plurality of fin-type active areas protruding from a top surface of a first device isolating layer by forming the first device isolating layer in the plurality of first device isolating trenches, forming a plurality of second device isolating trenches at a pitch different from the first pitch by etching a portion of the substrate and the first device isolating layer, and forming a second device isolating layer in the plurality of second device isolating trenches, so as to form a plurality of fin-type active area groups separated from each other with the second device isolating layer therebetween.
摘要翻译： 一种制造半导体器件的方法包括：通过在衬底中形成以第一间距重复的多个第一器件隔离沟槽来形成多个鳍片，形成从第一器件隔离的顶表面突出的多个翅片型有源区域 通过在所述多个第一器件隔离沟槽中形成所述第一器件隔离层，通过蚀刻所述衬底和所述第一器件隔离层的一部分来形成以与所述第一间距不同的间距隔离沟槽的多个第二器件， 在所述多个第二器件隔离沟槽中的第二器件隔离层，以便形成彼此分离的多个鳍式有源区域组，其间具有第二器件隔离层。
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公开(公告)号：US10090190B2
公开(公告)日：2018-10-02
申请号：US15637552
申请日：2017-06-29
发明人： Young-sang Youn , Myung-Geun Song , Ji-hoon Cha , Jae-jik Baek , Bo-un Yoon , Jeong-nam Han
IPC分类号： H01L21/762 , H01L21/8234 , H01L21/265 , H01L21/763
摘要： A method of manufacturing a semiconductor device includes forming a plurality of fins by forming a plurality of first device isolating trenches repeated at a first pitch in a substrate, forming a plurality of fin-type active areas protruding from a top surface of a first device isolating layer by forming the first device isolating layer in the plurality of first device isolating trenches, forming a plurality of second device isolating trenches at a pitch different from the first pitch by etching a portion of the substrate and the first device isolating layer, and forming a second device isolating layer in the plurality of second device isolating trenches, so as to form a plurality of fin-type active area groups separated from each other with the second device isolating layer therebetween.
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公开(公告)号：US20180174889A1
公开(公告)日：2018-06-21
申请号：US15885067
申请日：2018-01-31
发明人： Young-Sang Youn , Myung-geun Song , Ji-hoon Cha , Jae-jik Baek , Bo-un Yoon , Jeong-nam Han
IPC分类号： H01L21/762 , H01L21/763 , H01L21/265 , H01L21/8234
摘要： A method of manufacturing a semiconductor device includes forming a plurality of fins by forming a plurality of first device isolating trenches repeated at a first pitch in a substrate, forming a plurality of fin-type active areas protruding from a top surface of a first device isolating layer by forming the first device isolating layer in the plurality of first device isolating trenches, forming a plurality of second device isolating trenches at a pitch different from the first pitch by etching a portion of the substrate and the first device isolating layer, and forming a second device isolating layer in the plurality of second device isolating trenches, so as to form a plurality of fin-type active area groups separated from each other with the second device isolating layer therebetween.
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公开(公告)号：US20170301581A1
公开(公告)日：2017-10-19
申请号：US15637552
申请日：2017-06-29
发明人： Young-Sang Youn , Myung-geun Song , Ji-hoon Cha , Jae-jik Baek , Bo-un Yoon , Jeong-nam Han
IPC分类号： H01L21/762 , H01L21/8234 , H01L21/763 , H01L21/265
CPC分类号： H01L21/76229 , H01L21/2652 , H01L21/763 , H01L21/823431 , H01L21/823481 , H01L21/845 , H01L27/0886 , H01L29/0649 , H01L29/0657
摘要： A method of manufacturing a semiconductor device includes forming a plurality of fins by forming a plurality of first device isolating trenches repeated at a first pitch in a substrate, forming a plurality of fin-type active areas protruding from a top surface of a first device isolating layer by forming the first device isolating layer in the plurality of first device isolating trenches, forming a plurality of second device isolating trenches at a pitch different from the first pitch by etching a portion of the substrate and the first device isolating layer, and forming a second device isolating layer in the plurality of second device isolating trenches, so as to form a plurality of fin-type active area groups separated from each other with the second device isolating layer therebetween.
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