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公开(公告)号:US20140008815A1
公开(公告)日:2014-01-09
申请号:US13911569
申请日:2013-06-06
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yeun-Sang Park , Byung-Lyul Park , SungHee Kang , Taeseong Kim , Kwangjin Moon , Sukchul Bang
IPC: H01L23/48
CPC classification number: H01L23/481 , H01L21/76898 , H01L2224/16145 , H01L2224/16225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73257 , H01L2924/1461 , H01L2924/15311 , H01L2924/00014 , H01L2924/00
Abstract: Semiconductor devices are disclosed. The semiconductor device may include a semiconductor substrate having a first surface and a second surface opposite to each other and a pad trench formed at a portion of the second surface, a through-electrode penetrating the semiconductor substrate and protruding from a bottom surface of the pad trench. A buried pad may be disposed in the pad trench and may surround the through-electrode.
Abstract translation: 公开了半导体器件。 半导体器件可以包括具有彼此相对的第一表面和第二表面的半导体衬底和形成在第二表面的一部分处的衬垫沟槽,穿透半导体衬底并从衬底的底表面突出的通孔 沟。 掩埋焊盘可以设置在焊盘沟槽中并且可以围绕通孔。
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公开(公告)号:US08836142B2
公开(公告)日:2014-09-16
申请号:US13911569
申请日:2013-06-06
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yeun-Sang Park , Byung-Lyul Park , SungHee Kang , Taeseong Kim , Kwangjin Moon , Sukchul Bang
IPC: H01L23/52 , H01L23/528 , H01L23/48
CPC classification number: H01L23/481 , H01L21/76898 , H01L2224/16145 , H01L2224/16225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73257 , H01L2924/1461 , H01L2924/15311 , H01L2924/00014 , H01L2924/00
Abstract: Semiconductor devices are disclosed. The semiconductor device may include a semiconductor substrate having a first surface and a second surface opposite to each other and a pad trench formed at a portion of the second surface, a through-electrode penetrating the semiconductor substrate and protruding from a bottom surface of the pad trench. A buried pad may be disposed in the pad trench and may surround the through-electrode.
Abstract translation: 公开了半导体器件。 半导体器件可以包括具有彼此相对的第一表面和第二表面的半导体衬底和形成在第二表面的一部分处的衬垫沟槽,穿透半导体衬底并从衬底的底表面突出的通孔 沟。 掩埋焊盘可以设置在焊盘沟槽中并且可以围绕通孔。
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