SUBSTRATE PROCESSING APPARATUS
    2.
    发明申请

    公开(公告)号:US20240376604A1

    公开(公告)日:2024-11-14

    申请号:US18660546

    申请日:2024-05-10

    Abstract: A substrate processing apparatus includes a processing chamber including a processing space where a substrate is processed and a heater provided in the process chamber to support the substrate and configured to heat the substrate, wherein the heater includes a body, a first protrusion portion protruding upward in a vertical direction from a center of the body, and a second protrusion portion protruding upward from a center of the first protrusion portion, first embossings are formed in a region which does not overlap the first protrusion portion in a vertical direction on an upper surface of the body, second embossings are formed in a region which does not overlap the second protrusion portion in a vertical direction on an upper surface of the first protrusion portion, and third embossings are formed on an upper surface of the second protrusion portion.

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