公开(公告)号：US20230307371A1

公开(公告)日：2023-09-28

申请号：US17981119

申请日：2022-11-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji Youn SEO ,  Sang Ho RHA ,  Tae-Jong HAN

IPC: H01L23/535 ,  H01L27/11582 ,  H01L27/11573

CPC classification number: H01L23/535 ,  H01L27/11582 ,  H01L27/11573

Abstract: A semiconductor memory device includes a peripheral circuit structure including a peripheral circuit substrate, a peripheral circuit element on the peripheral circuit substrate, and a wiring structure connected to the peripheral circuit element and a memory cell structure provided on the peripheral circuit structure. The memory cell structure includes a cell substrate including a cell array region, an extended region, and a through region, a mold structure including a plurality of gate electrodes sequentially provided on the cell array region and on the extended region in a step form, and a plurality of mold sacrifice films sequentially provided on the through region, a channel structure intersecting the plurality of gate electrodes on the cell array region, and a cell contact penetrating the mold structure on the extended region and configured to connect at least one of the plurality of gate electrodes and the wiring structure.

公开(公告)号：US20230043714A1

公开(公告)日：2023-02-09

申请号：US17971807

申请日：2022-10-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Heon LEE ,  Munjun KIM ,  Jaekang KOH ,  Tae-Jong HAN

IPC: H01L21/768 ,  H01L21/033 ,  H01L21/3213

Abstract: Provided are a method of manufacturing a semiconductor device using a thermally decomposable layer, a semiconductor manufacturing apparatus, and the semiconductor device. The method includes forming an etch target layer on a substrate, forming thermally decomposable patterns spaced apart from each other on the etch target layer, forming a first mask pattern covering at least sidewalls of the thermally decomposable patterns, and removing the thermally decomposable patterns by a heating method to expose a sidewall of the first mask pattern.