公开(公告)号：US20210198801A1

公开(公告)日：2021-07-01

申请号：US17126902

申请日：2020-12-18

申请人： Samsung Electronics Co., Ltd.

发明人： Hyungjun KIM ,  Chan KWAK ,  Takayoshi SASAKI ,  Yasuo EBINA ,  Changsoo LEE ,  Dohwon JUNG ,  Giyoung JO ,  Takaaki TANIGUCHI

IPC分类号： C30B1/02 ,  C03C17/23 ,  C03C17/00

摘要： Provided are a dielectric material, a device including the dielectric material, and a method of preparing the dielectric material, in which the dielectric material may include: a layered perovskite compound, wherein the layered perovskite compound may include at least one selected from a Dion-Jacobson phase, an Aurivillius phase, and a Ruddlesden-Popper phase, a temperature coefficient of capacitance (TCC) of a capacitance at 200° C. with respect to a capacitance at 40° C. may be in a range of about −15 percent (%) to about 15%, and a permittivity of the dielectric material may be 200 or greater in a range of about 1 kilohertz (kHz) to about 1 megahertz (MHz).