Abstract:
A method of providing an augmented reality (AR) content in a vehicle, and/or a wearable AR device and an electronic device for performing a method. The wearable AR device may include a processor and a memory storing instructions to be executed by the processor, and when the instructions are executed by the processor, the processor is configured to: determine whether the wearable AR device is in a space of the vehicle based on at least one of information received from the vehicle or a value measured using at least one sensor of the wearable AR device; when it is determined that the wearable AR device is not in the space of the vehicle, output an AR content corresponding to a space around the wearable AR device based on the value measured using the at least one sensor of the wearable AR device; when it is determined that the wearable AR device is in the space of the vehicle, determine whether there are anchor devices of the vehicle capable of communicating with the wearable AR device; and when it is determined that there are the anchor devices capable of communication, output an AR content corresponding to a space of the vehicle around the wearable AR device by communicating with the anchor devices.
Abstract:
A capacitor including a lower electrode; an upper electrode apart from the lower electrode; and a between the lower electrode and the upper electrode, the dielectric including a dielectric layer including TiO2, and a leakage current reducing layer including GeO2 in the dielectric layer. Due to the leakage current reducing layer, a leakage current is effectively reduced while a decrease in the dielectric constant of the dielectric thin-film is small.
Abstract:
A semiconductor device may comprise a stack structure on a substrate, the stack structure including a plurality of dielectric layers and a plurality of transparent conductive oxide layers, the dielectric layers and the transparent conductive oxide layers are alternately stacked, each of the dielectric layers and a corresponding one of the transparent conductive oxide layer adjacent to each other in a vertical direction have equal horizontal widths, and a channel structure extending through the stack structure, the channel structure including an information storage layer, a channel layer inside the information storage layer, and a buried dielectric layer inside the channel layer.
Abstract:
An X-ray generation apparatus includes: an electron emission device comprising a plurality of electron emission units that emit electrons; a transmission type X-ray emission unit for emitting an X-ray by electrons emitted by the plurality of electron emission units; and a vacuum chamber for shielding the electron emission device and the transmission type X-ray emission unit by using vacuum. An X-ray imaging system includes an X-ray detection apparatus for detecting an X-ray that is irradiated from the X-ray generation apparatus and passes through an object.
Abstract:
Provided is a method of preparing a dielectric film having a nanoscale three-dimensional shape and including an oxide, the oxide represented by RAMBOC where R is a divalent element and M is a pentavalent element, the method may include synthesizing a target material, the target material including the divalent element and the pentavalent element; and forming the oxide by depositing the divalent element and the pentavalent element, from the target material, onto a substrate such that the oxide includes a perovskite-type crystal structure, 1.3
Abstract:
A The heating element structure includes: a conductive metal substrate; a heating layer spaced apart from the conductive metal substrate and configured to generate heat in response to an electrical signal; electrodes in contact with the heating layer and configured to provide the electrical signal to the heating layer; and a first insulating layer on the conductive metal substrate, the first insulating layer comprising a first matrix material and a particle, wherein a difference between a coefficient of thermal expansion (CTE) of the first matrix material and a coefficient of thermal expansion of the particle is about 4×10−6 per Kelvin or less.
Abstract:
A heating element includes a matrix; and a plurality of conductive fillers, wherein some of the plurality of conductive fillers include first nano-sheets and first metal media configured to reduce a contact resistance between the first nano-sheets.
Abstract:
According to various embodiments of the present disclosure, a communication module operatively coupled to a plurality of sensing devices comprising a 1st sensing device and a 2nd sensing device; and a processor, wherein the processor may perform identifying a 1st information set sensed by using the 1st sensing device and a 2nd information set sensed by using the 2nd sensing device, determining a correlation between the 1st information set and the 2nd information set; grouping the 1st sensing device and the 2nd sensing device based on the correlation; and controlling a sensing period of at least one of the 1st sensing device and the 2nd sensing device.
Abstract:
Provided are a lighting system, a backlight unit and a 3D image display apparatus including the backlight unit. The backlight unit includes: a lighting system configured to selectively output collimated light and diverging light, a diffraction device, and a light guide plate configured to guide the collimated light and the diverging light from the lighting system to the diffraction device. An exit direction of the collimated light from the diffraction device depends on at least one of an angle of incidence of the collimated light and the wavelength of the collimated light.
Abstract:
Complex films having an electro-chromic mirror and an anti-reflective film, displays that include the complex films, and methods of manufacturing the complex films and the displays, include an electro-chromic mirror including a plurality of electro-chromic material layers, and an anti-reflective film including a plurality of anti-reflective material layers, wherein at least some of the plurality of anti-reflective material layers are between an uppermost layer and a lowermost layer of the plurality of electro-chromic material layers.