公开(公告)号：US11942127B2

公开(公告)日：2024-03-26

申请号：US17382847

申请日：2021-07-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoshiaki Sonobe ,  Takeshi Kato

IPC: G11C11/00 ,  G01R33/09 ,  G11C11/16 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

CPC classification number: G11C11/161 ,  G01R33/093 ,  G11C11/1675 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

Abstract: A magnetic memory device includes a spin orbit torque (SOT) generator configured to generate a SOT, and a vertical magnetic recording layer connected to a main surface of the SOT generator at one end thereof, and is configured to record information using a SOT generated by the SOT generator and a current flowing in the vertical magnetic recording layer in combination. The magnetic memory device includes an insulating layer on one end of the vertical magnetic recording layer in an extension direction of the vertical magnetic recording layer, and a fixed layer on the insulating layer in the extension direction of the vertical magnetic recording layer.

公开(公告)号：US10679686B2

公开(公告)日：2020-06-09

申请号：US16529920

申请日：2019-08-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Masatoshi Sonoda ,  Yoshiaki Sonobe ,  Takeshi Kato

IPC: G11C11/00 ,  G11C11/16 ,  G11C7/04 ,  H01L43/10

Abstract: A magnetoresistive memory device includes a memory cell including a magnetic tunnel junction element, a detector to detect a current value writable in units of the memory cell, a current value storage area, and a current controller. The current value storage area stores at least one of a maximum value and a minimum value of the writable current value detected by the detector. The current controller performs at least one control operation of an operation of controlling a write current value of the memory cell based on the maximum value and an operation of controlling a read current value of the memory cell based on the minimum value.

公开(公告)号：US10431279B2

公开(公告)日：2019-10-01

申请号：US15841454

申请日：2017-12-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Masatoshi Sonoda ,  Yoshiaki Sonobe ,  Takeshi Kato

IPC: G11C11/00 ,  G11C11/16 ,  G11C7/04 ,  H01L43/10

Abstract: A magnetoresistive memory device includes a memory cell including a magnetic tunnel junction element, a detector to detect a current value writable in units of the memory cell, a current value storage area, and a current controller. The current value storage area stores at least one of a maximum value and a minimum value of the writable current value detected by the detector. The current controller performs at least one control operation of an operation of controlling a write current value of the memory cell based on the maximum value and an operation of controlling a read current value of the memory cell based on the minimum value.

公开(公告)号：US10566042B2

公开(公告)日：2020-02-18

申请号：US16169653

申请日：2018-10-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ken Machida ,  Yoshiaki Sonobe ,  Takeshi Kato

IPC: G11C11/16 ,  G11B5/39 ,  H01L29/82 ,  H01L43/10 ,  H01L27/22 ,  H01L43/08

Abstract: Magnetic tunnel junction devices are provided. A magnetic tunnel junction device includes a pinned layer. The magnetic tunnel junction device includes a free layer on the pinned layer. The free layer includes a first layer, a second layer that is on the first layer, and a third layer that is between the first layer and the second layer. A Curie temperature of the third layer is lower than a Curie temperature of the first layer and lower than a Curie temperature of the second layer. Moreover, the magnetic tunnel junction device includes an insulating layer that is between the pinned layer and the free layer. Related magnetoresistive memory devices are also provided.