公开(公告)号：US11322208B2

公开(公告)日：2022-05-03

申请号：US17098590

申请日：2020-11-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-ho Seo ,  Sangwon Hwang ,  Suk-Eun Kang ,  Haneol Jang ,  Youngwook Jeong ,  Wanha Hwang

IPC: G11C16/26 ,  G11C16/16 ,  G11C16/34 ,  G11C16/24 ,  G11C16/08

Abstract: A program method of a nonvolatile memory device including receiving a write address and write data, generating a seed corresponding to the write address, generating a random sequence by using the seed, randomizing the write data by using the random sequence, and programming the randomized write data to a memory area corresponding to the write address may be provided. The seed may provide state shaping variable depending on a location of a word line, at which the received write data is to be programmed.

公开(公告)号：US11682460B2

公开(公告)日：2023-06-20

申请号：US17714552

申请日：2022-04-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-ho Seo ,  Sangwon Hwang ,  Suk-Eun Kang ,  Haneol Jang ,  Youngwook Jeong ,  Wanha Hwang

IPC: G11C16/16 ,  G11C16/26 ,  G11C16/34 ,  G11C16/24 ,  G11C16/08

CPC classification number: G11C16/16 ,  G11C16/08 ,  G11C16/24 ,  G11C16/26 ,  G11C16/3445

Abstract: A program method of a nonvolatile memory device including receiving a write address and write data, generating a seed corresponding to the write address, generating a random sequence by using the seed, randomizing the write data by using the random sequence, and programming the randomized write data to a memory area corresponding to the write address may be provided. The seed may provide state shaping variable depending on a location of a word line, at which the received write data is to be programmed.