公开(公告)号：US12020759B2

公开(公告)日：2024-06-25

申请号：US17878019

申请日：2022-07-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-Ho Seo ,  Juwon Lee ,  Suk-Eun Kang ,  Dogyeong Lee ,  Youngwook Jeong ,  Sang-Hyun Joo

IPC: G11C16/34 ,  G06N3/08 ,  G11C11/56 ,  G11C16/04 ,  G11C16/10 ,  G11C16/16 ,  G11C16/24

CPC classification number: G11C16/3459 ,  G06N3/08 ,  G11C11/5628 ,  G11C11/5635 ,  G11C11/5671 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/16 ,  G11C16/24 ,  G11C16/3495

Abstract: An operation method of a nonvolatile memory device includes performing a 1-stage program step and a 1-stage verify step on a first word line, storing a first time stamp, performing the 1-stage program step and the 1-stage verify step on a second word line, storing a second time stamp, calculating a delay time based on the first time stamp and the second time stamp, determining whether the delay time is greater than a threshold value, adjusting at least one 2-stage verify voltage associated with the first word line from a first voltage level to a second voltage level based on the delay time, and performing a 2-stage program step and a 2-stage verify step on the first word line. A level of the at least one 1-stage verify voltage is lower than the second voltage level, and the second voltage level is lower than the first voltage level.

公开(公告)号：US11322208B2

公开(公告)日：2022-05-03

申请号：US17098590

申请日：2020-11-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-ho Seo ,  Sangwon Hwang ,  Suk-Eun Kang ,  Haneol Jang ,  Youngwook Jeong ,  Wanha Hwang

IPC: G11C16/26 ,  G11C16/16 ,  G11C16/34 ,  G11C16/24 ,  G11C16/08

Abstract: A program method of a nonvolatile memory device including receiving a write address and write data, generating a seed corresponding to the write address, generating a random sequence by using the seed, randomizing the write data by using the random sequence, and programming the randomized write data to a memory area corresponding to the write address may be provided. The seed may provide state shaping variable depending on a location of a word line, at which the received write data is to be programmed.

公开(公告)号：US11682460B2

公开(公告)日：2023-06-20

申请号：US17714552

申请日：2022-04-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-ho Seo ,  Sangwon Hwang ,  Suk-Eun Kang ,  Haneol Jang ,  Youngwook Jeong ,  Wanha Hwang

IPC: G11C16/16 ,  G11C16/26 ,  G11C16/34 ,  G11C16/24 ,  G11C16/08

CPC classification number: G11C16/16 ,  G11C16/08 ,  G11C16/24 ,  G11C16/26 ,  G11C16/3445

Abstract: A program method of a nonvolatile memory device including receiving a write address and write data, generating a seed corresponding to the write address, generating a random sequence by using the seed, randomizing the write data by using the random sequence, and programming the randomized write data to a memory area corresponding to the write address may be provided. The seed may provide state shaping variable depending on a location of a word line, at which the received write data is to be programmed.