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公开(公告)号：US11380398B2
公开(公告)日：2022-07-05
申请号：US17182556
申请日：2021-02-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jun-Ho Seo , Suk-Eun Kang , Do Gyeong Lee , Ju Won Lee
Abstract: A storage device including a nonvolatile memory device that includes a nonvolatile memory cell array including a string including first and second memory cells stacked sequentially, and an OTP memory cell array that stores reference count values, the first and second memory cells respectively connected to first and second word lines; a controller including a processor that generates a read command for the first memory cell; a read level generator including a counter that receives the read command and calculates an off-cell count value of memory cells connected to the second word line, and a comparator that receives a first reference count value from the OTP memory cell array, compares the off-cell count value with the first reference count value to determine a threshold voltage shift of the second memory cell, and determines a read level of the first memory cell based on the threshold voltage shift.
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Patent Agency Ranking
公开(公告)号：US11322208B2
公开(公告)日：2022-05-03
申请号：US17098590
申请日：2020-11-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jun-ho Seo , Sangwon Hwang , Suk-Eun Kang , Haneol Jang , Youngwook Jeong , Wanha Hwang
Abstract: A program method of a nonvolatile memory device including receiving a write address and write data, generating a seed corresponding to the write address, generating a random sequence by using the seed, randomizing the write data by using the random sequence, and programming the randomized write data to a memory area corresponding to the write address may be provided. The seed may provide state shaping variable depending on a location of a word line, at which the received write data is to be programmed.
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公开(公告)号：US12020759B2
公开(公告)日：2024-06-25
申请号：US17878019
申请日：2022-07-31
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jun-Ho Seo , Juwon Lee , Suk-Eun Kang , Dogyeong Lee , Youngwook Jeong , Sang-Hyun Joo
CPC classification number: G11C16/3459 , G06N3/08 , G11C11/5628 , G11C11/5635 , G11C11/5671 , G11C16/0483 , G11C16/10 , G11C16/16 , G11C16/24 , G11C16/3495
Abstract: An operation method of a nonvolatile memory device includes performing a 1-stage program step and a 1-stage verify step on a first word line, storing a first time stamp, performing the 1-stage program step and the 1-stage verify step on a second word line, storing a second time stamp, calculating a delay time based on the first time stamp and the second time stamp, determining whether the delay time is greater than a threshold value, adjusting at least one 2-stage verify voltage associated with the first word line from a first voltage level to a second voltage level based on the delay time, and performing a 2-stage program step and a 2-stage verify step on the first word line. A level of the at least one 1-stage verify voltage is lower than the second voltage level, and the second voltage level is lower than the first voltage level.
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公开(公告)号：US11682460B2
公开(公告)日：2023-06-20
申请号：US17714552
申请日：2022-04-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jun-ho Seo , Sangwon Hwang , Suk-Eun Kang , Haneol Jang , Youngwook Jeong , Wanha Hwang
CPC classification number: G11C16/16 , G11C16/08 , G11C16/24 , G11C16/26 , G11C16/3445
Abstract: A program method of a nonvolatile memory device including receiving a write address and write data, generating a seed corresponding to the write address, generating a random sequence by using the seed, randomizing the write data by using the random sequence, and programming the randomized write data to a memory area corresponding to the write address may be provided. The seed may provide state shaping variable depending on a location of a word line, at which the received write data is to be programmed.
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公开(公告)号：US11923011B2
公开(公告)日：2024-03-05
申请号：US17837975
申请日：2022-06-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jun-Ho Seo , Suk-Eun Kang , Do Gyeong Lee , Ju Won Lee
CPC classification number: G11C16/10 , G11C16/08 , G11C16/28 , G11C16/30 , G11C16/3404
Abstract: A storage device including a nonvolatile memory device that includes a nonvolatile memory cell array including a string including first and second memory cells stacked sequentially, and an OTP memory cell array that stores reference count values, the first and second memory cells respectively connected to first and second word lines; a controller including a processor that generates a read command for the first memory cell; a read level generator including a counter that receives the read command and calculates an off-cell count value of memory cells connected to the second word line, and a comparator that receives a first reference count value from the OTP memory cell array, compares the off-cell count value with the first reference count value to determine a threshold voltage shift of the second memory cell, and determines a read level of the first memory cell based on the threshold voltage shift.
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公开(公告)号：US10573389B2
公开(公告)日：2020-02-25
申请号：US16013988
申请日：2018-06-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Chan-Ha Kim , Suk-Eun Kang , Ji-Su Kim , Seung-Kyung Ro , Dong-Gi Lee , Yun-Jung Lee , Jin-Wook Lee , Hee-Won Lee , Joon-Suc Jang , Young-Ha Choi
Abstract: An operating method of a storage device includes a controller: receiving read data from a non-volatile memory; measuring a plurality of threshold voltage distributions respectively corresponding to a plurality of memory units of the non-volatile memory, based on the received read data; measuring a distribution variation between the plurality of memory units, based on the measured plurality of threshold voltage distributions; dynamically determining operation parameters for the non-volatile memory, based on the measured distribution variation; and transmitting, to the non-volatile memory, an operate command, an address, and at least one operation parameter corresponding to the address.
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