公开(公告)号：US20160126119A1

公开(公告)日：2016-05-05

申请号：US14881414

申请日：2015-10-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joonghan SHIN ,  Bongjin KUH ,  Wanit MANOROTKUL ,  Hanmei CHOI

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/324 ,  B23K26/00 ,  H01L21/687

CPC classification number: H01L21/67115 ,  H01L21/268 ,  H01L21/68742

Abstract: A laser annealing apparatus includes a process chamber with a chamber window to transmit a laser beam, and a chuck in the process chamber, a top surface of the chuck supporting a loaded substrate, and a width of the chuck being smaller than a width of the loaded substrate.

Abstract translation: 激光退火装置包括具有腔室窗口以传递激光束的处理室和处理室中的卡盘，卡盘的顶表面支撑加载的基板，并且卡盘的宽度小于 加载基板。

公开(公告)号：US20160300847A1

公开(公告)日：2016-10-13

申请号：US15185020

申请日：2016-06-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wanit MANOROTKUL ,  Joong-han SHIN ,  Bong-jin KUH ,  Han-mei CHOI ,  Dmitry MIKULIK

IPC: H01L27/115 ,  H01L21/3205 ,  H01L21/02 ,  H01L23/528

CPC classification number: H01L27/11575 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02675 ,  H01L21/32055 ,  H01L23/528 ,  H01L27/11519 ,  H01L27/11526 ,  H01L27/11548 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11573 ,  H01L27/11582

Abstract: An IC device includes a polycrystalline silicon thin film interposed between a first level semiconductor circuit and a second level semiconductor circuit which are formed on a substrate and disposed to vertically overlap each other. The polycrystalline silicon thin film includes at least one silicon single crystal. The at least one silicon single crystal includes a flat horizontal portion, which provides an active region of the second level semiconductor device, and a pin-shaped protruding portion protruding from the flat horizontal portion toward the first level semiconductor device.