公开(公告)号：US20240061354A1

公开(公告)日：2024-02-22

申请号：US18233083

申请日：2023-08-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Hak PARK ,  Won Hyeok JO ,  Woo-Yong JUNG

IPC: G03F9/00 ,  G03F7/00 ,  G03F7/039

CPC classification number: G03F9/7088 ,  G03F7/70625 ,  G03F7/706849 ,  G03F7/70683 ,  G03F7/039

Abstract: A method of detecting coordinates of a mark is provided. The method includes: providing a plurality of structures and the mark on a wafer, each of the plurality of structures including a plurality of mold insulating layers and a plurality of mold sacrificial layers, which are alternately stacked, an end of each of the plurality of structures including a portion having a stair shape, and the mark being between adjacent structures among the plurality of structures; forming a photoresist layer on the plurality of structures and the mark, the photoresist layer including a portion concave toward the wafer between the adjacent structures; detecting the coordinates of the mark by irradiating a beam to the mark; determining an offset of the coordinates of the mark based on a beam path changing factor; and correcting the coordinates of the mark based on the offset.