公开(公告)号：US20240168392A1

公开(公告)日：2024-05-23

申请号：US18277188

申请日：2022-01-12

申请人： ASML Netherlands B.V.

发明人： Petrus Wilhelmus SMORENBURG ,  Johan REININK ,  Marinus Petrus REIJNDERS ,  Han-Kwang NIENHUYS ,  David O'DWYER ,  Sander Bas ROOBOL ,  Christina Lynn PORTER ,  Stephen EDWARD

IPC分类号： G03F7/00 ,  G21K1/10

CPC分类号： G03F7/706849 ,  G03F7/70233 ,  G03F7/70308 ,  G03F7/70316 ,  G21K1/10

摘要： An assembly and method for separating first radiation and second radiation in the far field, wherein the first radiation and the second radiation have non-overlapping wavelengths, The assembly comprises a capillary structure, wherein the first radiation and the second radiation propagate coaxially along at least a portion of the capillary structure, and an optical structure configured to control the spatial distribution of the first radiation outside of the capillary structure, through interference, such that the intensity of the first radiation in the far field is reduced along an optical axis of the second radiation.

公开(公告)号：US20240012338A1

公开(公告)日：2024-01-11

申请号：US18253747

申请日：2021-11-16

申请人： ASML Holding N.V.

发明人： Douglas C. CAPPELLI

IPC分类号： G03F7/00 ,  G03F9/00

CPC分类号： G03F7/70625 ,  G03F9/7069 ,  G03F7/706849

摘要： A metrology or inspection system, a lithographic apparatus, and a method are provided. The system includes an illumination system, an optical system, a first optical device, a second optical device, a detector, and a processor. The optical system is configured to split an illumination beam into a first sub-beam and a second sub-beam. The first optical device is configured to receive the first sub beam and direct the first sub-beam towards a first spot on a substrate. The substrate includes one or more target structures. The second optical device is configured to receive the second sub-beam and direct the second sub-beam towards a second spot on the substrate. The first spot is a different location than the second spot. The detector is configured to receive diffracted beams and to generate a detection signal. The processor is configured to determine a property of the one or more target structures.

公开(公告)号：US11800212B1

公开(公告)日：2023-10-24

申请号：US17716757

申请日：2022-04-08

申请人： KLA Corporation

发明人： Yonatan Vaknin ,  Andrew V. Hill ,  Amnon Manassen

IPC分类号： H04N23/56 ,  G03F7/00 ,  G01N21/956

CPC分类号： H04N23/56 ,  G01N21/956 ,  G03F7/70633 ,  G03F7/70653 ,  G03F7/706849 ,  G03F7/706851

摘要： An optical metrology system may include an overlay metrology tool for characterizing an overlay target on a sample, where the overlay target includes first-direction periodic features in a first set of layers of the sample, and second-direction periodic features in a second set of layers of the sample. The overlay metrology tool may simultaneously illuminate the overlay target with first illumination beams and second illumination beams and may further generate images of the overlay target based on diffraction of the first illumination beams and the second illumination beams by the overlay target, where diffraction orders of the first illumination beams contribute to resolved image formation of only the first-direction periodic features, and where diffraction orders of the second illumination beams contribute to resolved image formation of only the second-direction periodic features. The system may further generate overlay measurements along the first and second measurement directions based on the images.

公开(公告)号：US20240272560A1

公开(公告)日：2024-08-15

申请号：US18434204

申请日：2024-02-06

申请人： AUROS Technology, Inc.

发明人： Seong Yun CHOI ,  Hyo Sik HAM

IPC分类号： G03F7/00

CPC分类号： G03F7/70633 ,  G03F7/70666 ,  G03F7/706837 ,  G03F7/706849

摘要： Disclosed is an overlay measurement apparatus which may include: a light source unit configured to direct an illumination to an overlay measurement target formed in a wafer; a lens unit having an objective lens and a lens focus actuator; a detection unit acquiring a focus image at a measurement position; a stage on which the wafer is seated; and a control unit controlling the lens unit to acquire the overlay measurement target, processing a first sample image of the overlay measurement target detected by the detection unit and a second sample image rotated at 180 degrees based on the first sample image and detected, and calculating a difference between the processed images to calculate the difference as a correction image for correcting an image for which overlay is measured.

公开(公告)号：US12032300B2

公开(公告)日：2024-07-09

申请号：US17863216

申请日：2022-07-12

申请人： KLA Corporation

发明人： Andrew V. Hill ,  Vladimir Levinski ,  Daria Negri ,  Amnon Manassen ,  Yonatan Vaknin

IPC分类号： G03F7/00 ,  G01B11/27

CPC分类号： G03F7/70633 ,  G01B11/272 ,  G03F7/70683 ,  G03F7/706849 ,  G03F7/706851

摘要： An overlay metrology system may include illumination sources configured to generate one or more pairs of mutually coherent illumination beams and illumination optics to direct the pairs of illumination beams to an overlay target at common altitude incidence angles and symmetrically opposed azimuthal incidence angles, where the overlay target includes two or more grating structures distributed along one or more measurement directions. The system may further include imaging optics to image the overlay target onto detectors when implementing the metrology recipe, where an image of a particular one of the two or more grating structures is generated exclusively with a single non-zero diffraction order of light from each of the illumination beams within the particular one of the pairs of illumination beams. The system may further include a controller to determine overlay measurements based on images of the overlay target.

公开(公告)号：US11940608B2

公开(公告)日：2024-03-26

申请号：US17608038

申请日：2020-04-02

申请人： ASML NETHERLANDS B.V.

发明人： Sebastianus Adrianus Goorden

IPC分类号： G02B21/00 ,  G01N21/95 ,  G01N21/956 ,  G02B21/02 ,  G02B21/10 ,  G03F7/00

CPC分类号： G02B21/0016 ,  G01N21/9501 ,  G02B21/002 ,  G02B21/0036 ,  G02B21/02 ,  G02B21/10 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/706849 ,  G03F7/706851 ,  G01N21/95623

摘要： A dark field metrology device includes an objective lens arrangement and a zeroth order block to block zeroth order radiation. The objective lens arrangement directs illumination onto a specimen to be measured and collects scattered radiation from the specimen, the scattered radiation including zeroth order radiation and higher order diffracted radiation. The dark field metrology device is operable to perform an illumination scan to scan illumination over at least two different subsets of the maximum range of illumination angles; and simultaneously perform a detection scan which scans the zeroth order block and/or the scattered radiation with respect to each other over a corresponding subset of the maximum range of detection angles during at least part of the illumination scan.

公开(公告)号：US20240094641A1

公开(公告)日：2024-03-21

申请号：US18255543

申请日：2021-12-02

申请人： ASML Holding N.V. ,  ASML Netherlands B.V.

发明人： Justin Lloyd KREUZER ,  Simon Reinald HUISMAN ,  Sebastianus Adrianus GOORDEN ,  Filippo ALPEGGIANI

IPC分类号： G03F7/00

CPC分类号： G03F7/70633 ,  G03F7/706837 ,  G03F7/706849

摘要： The system includes a radiation source, a diffractive element, an optical system, a detector, and a processor. The radiation source generates radiation. The diffractive element diffracts the radiation to generate a first beam and a second beam. The first beam includes a first non-zero diffraction order and the second beam includes a second non-zero diffraction order that is different from the first non-zero diffraction order. The optical system receives a first scattered beam and a second scattered radiation beam from a target structure and directs the first scattered beam and the second scattered beam towards a detector. The detector generates a detection signal. The processor analyzes the detection signal to determine a target structure property based on at least the detection signal. The first beam is attenuated with respect to the second beam or the first scattered beam is purposely attenuated with respect to the second scattered beam.

公开(公告)号：US20240337953A1

公开(公告)日：2024-10-10

申请号：US18372531

申请日：2023-09-25

申请人： KLA Corporation

发明人： Itay Gdor ,  Mordechy Kot ,  Yuval Lubashevsky ,  Nickolai Isakovitch ,  Daria Negri

IPC分类号： G03F7/00

CPC分类号： G03F7/70633 ,  G03F7/706831 ,  G03F7/706837 ,  G03F7/706849 ,  G03F7/706851

摘要： A method may include receiving time-varying interference signals from two or more photodetectors associated with a grating structure and a reference grating structure. The grating structure may include one or more diffraction gratings, where the reference grating structure includes a reference grating arranged next to the one or more diffraction gratings of the grating structure and where the one or more illumination beams simultaneously interact with grating structure and the reference grating structure as the sample is scanned relative to the illumination beam. The method may include determining at least one of a real-time position or a scanning velocity of the grating structure during the scan based on the reference grating signal. The method may include determining one or more overlay errors based on the grating signals from the grating structure and the real-time position of the grating structure during the scan determined based on the reference grating signal.

公开(公告)号：US12105431B2

公开(公告)日：2024-10-01

申请号：US17584335

申请日：2022-01-25

申请人： KLA Corporation

发明人： Itay Gdor ,  Yuval Lubashevsky ,  Alon Alexander Volfman ,  Daria Negri ,  Yevgeniy Men ,  Elad Farchi

IPC分类号： G03F7/00 ,  G01N21/21 ,  H01L21/66

CPC分类号： G03F7/70633 ,  G01N21/211 ,  G03F7/706849 ,  H01L22/12

摘要： Metrology is performed on a semiconductor wafer using a system with an apodizer. A spot is formed on the semiconductor wafer with a diameter from 2 nm to 5 nm. The associated beam of light has a wavelength from 400 nm to 800 nm. Small target measurement can be performed at a range of optical wavelengths.

公开(公告)号：US20240231244A1

公开(公告)日：2024-07-11

申请号：US18405339

申请日：2024-01-05

申请人： Kioxia Corporation

发明人： Hiroyuki TANIZAKI ,  Kiminori YOSHINO ,  Kaori FUMITA ,  Hiroaki SHIRAKAWA ,  Manabu TAKAKUWA ,  Kentaro KASA ,  Soichi INOUE ,  Satoshi TANAKA

IPC分类号： G03F7/00 ,  G01N21/95 ,  G01N21/956

CPC分类号： G03F7/70633 ,  G01N21/9501 ,  G01N21/956 ,  G03F7/706833 ,  G03F7/706849

摘要： A measuring device includes a light source that irradiates a measurement spot on a wafer formed with memory holes and slits with a multi-wavelength light, a first imaging unit that acquires a first pupil plane intensity distribution image of reflected light from the measurement spot, a second imaging unit that acquires a second pupil plane intensity distribution image of the reflected light, and a detection unit that analyzes the second pupil plane intensity distribution image to measure overlay. The measuring device includes an overlay analysis unit that acquires the first and second pupil plane intensity distribution images while moving a position of the measurement spot and selects a measurement spot not including the slit based on the first pupil plane intensity distribution image, and uses the overlay obtained by analyzing the second pupil plane intensity distribution image of the selected measurement spot as the overlay of the memory hole and a slit.